Abstract
Inelastic light scattering is used to determine the band offsets in semiconductor heterojunctions. The conduction band discontinuity is obtained from energy level spacings measured in electronic light scattering spectra of photoexcited quantum-well heterostructures. The method has been applied to GaAs-AlGaAs, GaSb-AlGaSb and InGaAs-GaAs heterojunctions. This paper reviews the light scattering determinations of band offsets. These results are compared with those obtained with more conventional methods. We also consider the impact of the light scattering results on chemical trends and the influence of strain in the band lineup problem.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1698-1711 |
| Number of pages | 14 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 24 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 1988 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering