Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells

J. Menéndez, A. Pinczuk, D. J. Werder, A. C. Gossard, J. H. English

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.

Original languageEnglish (US)
Pages (from-to)8863-8866
Number of pages4
JournalPhysical Review B
Volume33
Issue number12
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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