Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells

J. Menéndez; A. Pinczuk; D. J. Werder; A. C. Gossard; J. H. English

doi:10.1103/PhysRevB.33.8863

Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells

J. Menéndez, A. Pinczuk, D. J. Werder, A. C. Gossard, J. H. English

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Abstract

The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.

Original language	English (US)
Pages (from-to)	8863-8866
Number of pages	4
Journal	Physical Review B
Volume	33
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.33.8863
State	Published - Jan 1 1986
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells",

abstract = "The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.",

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AU - Menéndez, J.

AU - Pinczuk, A.

AU - Werder, D. J.

AU - Gossard, A. C.

AU - English, J. H.

PY - 1986/1/1

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N2 - The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.

AB - The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.

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Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells

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