Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells

Jose Menendez, A. Pinczuk, D. J. Werder, A. C. Gossard, J. H. English

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.

Original languageEnglish (US)
Pages (from-to)8863-8866
Number of pages4
JournalPhysical Review B
Volume33
Issue number12
DOIs
StatePublished - 1986
Externally publishedYes

Fingerprint

Light scattering
Semiconductor quantum wells
light scattering
quantum wells
Conduction bands
discontinuity
conduction bands
resonance scattering
Phonons
Valence bands
Binding energy
Excitons
Band structure
Raman scattering
phonons
binding energy
excitons
Raman spectra
valence
Chemical analysis

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells. / Menendez, Jose; Pinczuk, A.; Werder, D. J.; Gossard, A. C.; English, J. H.

In: Physical Review B, Vol. 33, No. 12, 1986, p. 8863-8866.

Research output: Contribution to journalArticle

Menendez, Jose ; Pinczuk, A. ; Werder, D. J. ; Gossard, A. C. ; English, J. H. / Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells. In: Physical Review B. 1986 ; Vol. 33, No. 12. pp. 8863-8866.
@article{1a5379605f4b45dca515019aca8f183b,
title = "Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells",
abstract = "The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.",
author = "Jose Menendez and A. Pinczuk and Werder, {D. J.} and Gossard, {A. C.} and English, {J. H.}",
year = "1986",
doi = "10.1103/PhysRevB.33.8863",
language = "English (US)",
volume = "33",
pages = "8863--8866",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells

AU - Menendez, Jose

AU - Pinczuk, A.

AU - Werder, D. J.

AU - Gossard, A. C.

AU - English, J. H.

PY - 1986

Y1 - 1986

N2 - The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.

AB - The conduction-band offset in GaAs-AlxGa1-xAs quantum wells is determined with a new light scattering method. A value of Ec Eg=Qe=0.69 is found for x 0.06. The conduction-band discontinuity Ec is obtained from electronic light scattering in a photoexcited sample. The total gap discontinuity Eg is deduced from resonance Raman scattering by AlxGa1-xAs phonons in the same sample. The light scattering method is unique because Ec can be determined regardless of the valence-band structure or exciton binding energies. It also allows a direct measurement of Eg, so that an exact knowledge of the alloy composition in AlxGa1-xAs is no longer needed.

UR - http://www.scopus.com/inward/record.url?scp=0039368917&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039368917&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.33.8863

DO - 10.1103/PhysRevB.33.8863

M3 - Article

VL - 33

SP - 8863

EP - 8866

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 12

ER -