Abstract

For the first time it is reported that nitrogen-doped titanium oxide with light annealing can improve the device performance by 300% when acting as an interfacial layer between CdSe quantum dot/poly-3-hexylthiophene and the cathode in the photovoltaic devices. Substitutional N doping with a concentration of 1.2 at.% was found by X-ray photoelectron spectroscopy which was responsible for 0.1 eV band gap reduction of TiOx. Photoluminescence and the external quantum efficiency spectrum confirmed the enhanced charge collection and association rate after light annealing. Three-dimensional atomic force microscopy results agreed with the series resistance measurements, confirming that a good contact was achieved. The topography study also indicated that the active layer morphology changed upon light annealing. Improved stability and longer lifetime were also found with TiOxNy capped devices, which were optimized with light annealing. TiOx capped devices were also evaluated for comparison in this study.

Original languageEnglish (US)
Pages (from-to)3339-3347
Number of pages9
JournalOrganic Electronics: physics, materials, applications
Volume14
Issue number12
DOIs
StatePublished - 2013

Fingerprint

Titanium oxides
titanium oxides
Semiconductor quantum dots
Nitrogen
quantum dots
Annealing
nitrogen
annealing
augmentation
Quantum efficiency
Topography
quantum efficiency
Atomic force microscopy
Photoluminescence
topography
Energy gap
Cathodes
X ray photoelectron spectroscopy
cathodes
Doping (additives)

Keywords

  • Interfacial layer
  • Light anneal
  • Nitrogen doped titanium oxide
  • Photocatalytic activity
  • Quantum dot solar cell

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers. / Yu, Jialin; Xia, Jilin; Kim, Inho; French, Benjamin L.; Haverinen, Hanna M.; Alford, Terry; Jabbour, Ghassan E.

In: Organic Electronics: physics, materials, applications, Vol. 14, No. 12, 2013, p. 3339-3347.

Research output: Contribution to journalArticle

Yu, Jialin ; Xia, Jilin ; Kim, Inho ; French, Benjamin L. ; Haverinen, Hanna M. ; Alford, Terry ; Jabbour, Ghassan E. / Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers. In: Organic Electronics: physics, materials, applications. 2013 ; Vol. 14, No. 12. pp. 3339-3347.
@article{5f9f9a108e3141b6b54772d53ebe6db1,
title = "Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers",
abstract = "For the first time it is reported that nitrogen-doped titanium oxide with light annealing can improve the device performance by 300{\%} when acting as an interfacial layer between CdSe quantum dot/poly-3-hexylthiophene and the cathode in the photovoltaic devices. Substitutional N doping with a concentration of 1.2 at.{\%} was found by X-ray photoelectron spectroscopy which was responsible for 0.1 eV band gap reduction of TiOx. Photoluminescence and the external quantum efficiency spectrum confirmed the enhanced charge collection and association rate after light annealing. Three-dimensional atomic force microscopy results agreed with the series resistance measurements, confirming that a good contact was achieved. The topography study also indicated that the active layer morphology changed upon light annealing. Improved stability and longer lifetime were also found with TiOxNy capped devices, which were optimized with light annealing. TiOx capped devices were also evaluated for comparison in this study.",
keywords = "Interfacial layer, Light anneal, Nitrogen doped titanium oxide, Photocatalytic activity, Quantum dot solar cell",
author = "Jialin Yu and Jilin Xia and Inho Kim and French, {Benjamin L.} and Haverinen, {Hanna M.} and Terry Alford and Jabbour, {Ghassan E.}",
year = "2013",
doi = "10.1016/j.orgel.2013.09.033",
language = "English (US)",
volume = "14",
pages = "3339--3347",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",
number = "12",

}

TY - JOUR

T1 - Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers

AU - Yu, Jialin

AU - Xia, Jilin

AU - Kim, Inho

AU - French, Benjamin L.

AU - Haverinen, Hanna M.

AU - Alford, Terry

AU - Jabbour, Ghassan E.

PY - 2013

Y1 - 2013

N2 - For the first time it is reported that nitrogen-doped titanium oxide with light annealing can improve the device performance by 300% when acting as an interfacial layer between CdSe quantum dot/poly-3-hexylthiophene and the cathode in the photovoltaic devices. Substitutional N doping with a concentration of 1.2 at.% was found by X-ray photoelectron spectroscopy which was responsible for 0.1 eV band gap reduction of TiOx. Photoluminescence and the external quantum efficiency spectrum confirmed the enhanced charge collection and association rate after light annealing. Three-dimensional atomic force microscopy results agreed with the series resistance measurements, confirming that a good contact was achieved. The topography study also indicated that the active layer morphology changed upon light annealing. Improved stability and longer lifetime were also found with TiOxNy capped devices, which were optimized with light annealing. TiOx capped devices were also evaluated for comparison in this study.

AB - For the first time it is reported that nitrogen-doped titanium oxide with light annealing can improve the device performance by 300% when acting as an interfacial layer between CdSe quantum dot/poly-3-hexylthiophene and the cathode in the photovoltaic devices. Substitutional N doping with a concentration of 1.2 at.% was found by X-ray photoelectron spectroscopy which was responsible for 0.1 eV band gap reduction of TiOx. Photoluminescence and the external quantum efficiency spectrum confirmed the enhanced charge collection and association rate after light annealing. Three-dimensional atomic force microscopy results agreed with the series resistance measurements, confirming that a good contact was achieved. The topography study also indicated that the active layer morphology changed upon light annealing. Improved stability and longer lifetime were also found with TiOxNy capped devices, which were optimized with light annealing. TiOx capped devices were also evaluated for comparison in this study.

KW - Interfacial layer

KW - Light anneal

KW - Nitrogen doped titanium oxide

KW - Photocatalytic activity

KW - Quantum dot solar cell

UR - http://www.scopus.com/inward/record.url?scp=84887120079&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887120079&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2013.09.033

DO - 10.1016/j.orgel.2013.09.033

M3 - Article

VL - 14

SP - 3339

EP - 3347

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 12

ER -