Light emitting diodes with extremely high extraction-efficiency for electroluminescence refrigeration

S. Q. Yu, N. Rider, D. Ding, J. B. Wang, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.

Original languageEnglish (US)
Title of host publication2007 Quantum Electronics and Laser Science Conference, QELS
DOIs
StatePublished - Dec 1 2007
Event2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Publication series

NameConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Other

Other2007 Quantum Electronics and Laser Science Conference, QELS
CountryUnited States
CityBaltimore, MD
Period5/6/075/11/07

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Yu, S. Q., Rider, N., Ding, D., Wang, J. B., Johnson, S., & Zhang, Y-H. (2007). Light emitting diodes with extremely high extraction-efficiency for electroluminescence refrigeration. In 2007 Quantum Electronics and Laser Science Conference, QELS [4431445] (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2007.4431445