Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration

S. Q. Yu, N. Rider, D. Ding, J. B. Wang, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
StatePublished - 2007
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Other

OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period5/6/075/11/07

Fingerprint

Electroluminescence
Refrigeration
Light emitting diodes
Lenses
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yu, S. Q., Rider, N., Ding, D., Wang, J. B., Johnson, S., & Zhang, Y-H. (2007). Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007 [4453668] https://doi.org/10.1109/CLEO.2007.4453668

Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration. / Yu, S. Q.; Rider, N.; Ding, D.; Wang, J. B.; Johnson, Shane; Zhang, Yong-Hang.

Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007. 4453668.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, SQ, Rider, N, Ding, D, Wang, JB, Johnson, S & Zhang, Y-H 2007, Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration. in Conference on Lasers and Electro-Optics, 2007, CLEO 2007., 4453668, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Baltimore, MD, United States, 5/6/07. https://doi.org/10.1109/CLEO.2007.4453668
Yu SQ, Rider N, Ding D, Wang JB, Johnson S, Zhang Y-H. Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007. 4453668 https://doi.org/10.1109/CLEO.2007.4453668
Yu, S. Q. ; Rider, N. ; Ding, D. ; Wang, J. B. ; Johnson, Shane ; Zhang, Yong-Hang. / Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration. Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007.
@inproceedings{97185b81f77e471a927f1ce249bbc7c0,
title = "Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration",
abstract = "InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.",
author = "Yu, {S. Q.} and N. Rider and D. Ding and Wang, {J. B.} and Shane Johnson and Yong-Hang Zhang",
year = "2007",
doi = "10.1109/CLEO.2007.4453668",
language = "English (US)",
isbn = "9781557528346",
booktitle = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",

}

TY - GEN

T1 - Light emitting diodes with extremely high extraction- efficiency for electroluminescence refrigeration

AU - Yu, S. Q.

AU - Rider, N.

AU - Ding, D.

AU - Wang, J. B.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2007

Y1 - 2007

N2 - InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.

AB - InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.

UR - http://www.scopus.com/inward/record.url?scp=82955220308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82955220308&partnerID=8YFLogxK

U2 - 10.1109/CLEO.2007.4453668

DO - 10.1109/CLEO.2007.4453668

M3 - Conference contribution

AN - SCOPUS:82955220308

SN - 9781557528346

BT - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

ER -