Light emission studies of total dose and hot carrier effects on silicon junctions

S. Kerns; D. Jiang; M. De La Bardonnie; F. Pelanchon; H. Barnaby

doi:10.1109/23.819157

Light emission studies of total dose and hot carrier effects on silicon junctions

S. Kerns, D. Jiang, M. De La Bardonnie, F. Pelanchon, H. Barnaby

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.

Original language	English (US)
Pages (from-to)	1804-1808
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	46
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.819157
State	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/23.819157

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@article{b52cdab2226647ea9a47f03040541ac5,

title = "Light emission studies of total dose and hot carrier effects on silicon junctions",

abstract = "Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.",

author = "S. Kerns and D. Jiang and {De La Bardonnie}, M. and F. Pelanchon and H. Barnaby",

year = "1999",

doi = "10.1109/23.819157",

language = "English (US)",

volume = "46",

pages = "1804--1808",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 PART 1",

}

TY - JOUR

T1 - Light emission studies of total dose and hot carrier effects on silicon junctions

AU - Kerns, S.

AU - Jiang, D.

AU - De La Bardonnie, M.

AU - Pelanchon, F.

AU - Barnaby, H.

PY - 1999

Y1 - 1999

N2 - Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.

AB - Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.

UR - http://www.scopus.com/inward/record.url?scp=0033314599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033314599&partnerID=8YFLogxK

U2 - 10.1109/23.819157

DO - 10.1109/23.819157

M3 - Article

AN - SCOPUS:0033314599

SN - 0018-9499

VL - 46

SP - 1804

EP - 1808

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 PART 1

ER -

Light emission studies of total dose and hot carrier effects on silicon junctions

Abstract

ASJC Scopus subject areas

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