Light emission studies of total dose and hot carrier effects on silicon junctions

S. Kerns, D. Jiang, M. De La Bardonnie, F. Pelanchon, Hugh Barnaby

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.

Original languageEnglish (US)
Pages (from-to)1804-1808
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
StatePublished - 1999
Externally publishedYes

Fingerprint

silicon junctions
Hot carriers
Light emission
light emission
Silicon
dosage
Coalescence
Passivation
coalescing
passivity
Boron
boron
Irradiation
Hydrogen
irradiation
causes
silicon
hydrogen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Kerns, S., Jiang, D., De La Bardonnie, M., Pelanchon, F., & Barnaby, H. (1999). Light emission studies of total dose and hot carrier effects on silicon junctions. IEEE Transactions on Nuclear Science, 46(6 PART 1), 1804-1808.

Light emission studies of total dose and hot carrier effects on silicon junctions. / Kerns, S.; Jiang, D.; De La Bardonnie, M.; Pelanchon, F.; Barnaby, Hugh.

In: IEEE Transactions on Nuclear Science, Vol. 46, No. 6 PART 1, 1999, p. 1804-1808.

Research output: Contribution to journalArticle

Kerns, S, Jiang, D, De La Bardonnie, M, Pelanchon, F & Barnaby, H 1999, 'Light emission studies of total dose and hot carrier effects on silicon junctions', IEEE Transactions on Nuclear Science, vol. 46, no. 6 PART 1, pp. 1804-1808.
Kerns, S. ; Jiang, D. ; De La Bardonnie, M. ; Pelanchon, F. ; Barnaby, Hugh. / Light emission studies of total dose and hot carrier effects on silicon junctions. In: IEEE Transactions on Nuclear Science. 1999 ; Vol. 46, No. 6 PART 1. pp. 1804-1808.
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