Light emission studies of total dose and hot carrier effects on silicon junctions

S. Kerns, D. Jiang, M. De La Bardonnie, F. Pelanchon, H. Barnaby

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.

Original languageEnglish (US)
Pages (from-to)1804-1808
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
StatePublished - Dec 1 1999

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Kerns, S., Jiang, D., De La Bardonnie, M., Pelanchon, F., & Barnaby, H. (1999). Light emission studies of total dose and hot carrier effects on silicon junctions. IEEE Transactions on Nuclear Science, 46(6 PART 1), 1804-1808.