@inproceedings{9f62c6e85a984a70af9293505b29ab03,
title = "Light emission from GaN microcrystals",
abstract = "We have grown high quality undoped and n-type GaN crystallites by a novel technique based on direct reaction of gallium metal with ammonia using a two step method. Powders produced by this method consist of at least two differently shaped crystallites; large columnar crystals sized around 10μm and small platelets crystals between 1 and 3μm. The crystallites have a well defined wurtzite structure, with an exceptionally strong near band-edge emission at around 3.342 eV. Yellow luminescence (YL) has been observed in Si-doped and O-doped powders but not in undoped powders grown by this method.",
author = "R. Garcia and A. Bell and Thomas, {A. C.} and Fernando Ponce",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994379",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "863--864",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}