Light emission from GaN microcrystals

R. Garcia, A. Bell, A. C. Thomas, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have grown high quality undoped and n-type GaN crystallites by a novel technique based on direct reaction of gallium metal with ammonia using a two step method. Powders produced by this method consist of at least two differently shaped crystallites; large columnar crystals sized around 10μm and small platelets crystals between 1 and 3μm. The crystallites have a well defined wurtzite structure, with an exceptionally strong near band-edge emission at around 3.342 eV. Yellow luminescence (YL) has been observed in Si-doped and O-doped powders but not in undoped powders grown by this method.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Pages863-864
Number of pages2
Volume772
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

microcrystals
crystallites
light emission
platelets
wurtzite
crystals
gallium
ammonia
luminescence
metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Garcia, R., Bell, A., Thomas, A. C., & Ponce, F. (2005). Light emission from GaN microcrystals. In AIP Conference Proceedings (Vol. 772, pp. 863-864) https://doi.org/10.1063/1.1994379

Light emission from GaN microcrystals. / Garcia, R.; Bell, A.; Thomas, A. C.; Ponce, Fernando.

AIP Conference Proceedings. Vol. 772 2005. p. 863-864.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Garcia, R, Bell, A, Thomas, AC & Ponce, F 2005, Light emission from GaN microcrystals. in AIP Conference Proceedings. vol. 772, pp. 863-864, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994379
Garcia R, Bell A, Thomas AC, Ponce F. Light emission from GaN microcrystals. In AIP Conference Proceedings. Vol. 772. 2005. p. 863-864 https://doi.org/10.1063/1.1994379
Garcia, R. ; Bell, A. ; Thomas, A. C. ; Ponce, Fernando. / Light emission from GaN microcrystals. AIP Conference Proceedings. Vol. 772 2005. pp. 863-864
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