Light emission from GaN microcrystals

R. Garcia, A. Bell, A. C. Thomas, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have grown high quality undoped and n-type GaN crystallites by a novel technique based on direct reaction of gallium metal with ammonia using a two step method. Powders produced by this method consist of at least two differently shaped crystallites; large columnar crystals sized around 10μm and small platelets crystals between 1 and 3μm. The crystallites have a well defined wurtzite structure, with an exceptionally strong near band-edge emission at around 3.342 eV. Yellow luminescence (YL) has been observed in Si-doped and O-doped powders but not in undoped powders grown by this method.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages863-864
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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