Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

A. Bell; R. Liu; Fernando Ponce; H. Amano; I. Akasaki; D. Cherns

doi:10.1063/1.1537517

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

A. Bell, R. Liu, Fernando Ponce, H. Amano, I. Akasaki, D. Cherns

Physics

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73 Scopus citations

Abstract

The microstructure and optical properties of AlGaN:Mg grown on patterned substrates were reported. It was suggested that the surface properties of the lateral facet inhibited the formation of these defects. Extended lattice defects present in the materials grown directly on the sapphire substrate were found to inhibit the near-band-edge emission.

Original language	English (US)
Pages (from-to)	349-351
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	3
DOIs	https://doi.org/10.1063/1.1537517
State	Published - Jan 20 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1537517

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title = "Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire",

abstract = "The microstructure and optical properties of AlGaN:Mg grown on patterned substrates were reported. It was suggested that the surface properties of the lateral facet inhibited the formation of these defects. Extended lattice defects present in the materials grown directly on the sapphire substrate were found to inhibit the near-band-edge emission.",

author = "A. Bell and R. Liu and Fernando Ponce and H. Amano and I. Akasaki and D. Cherns",

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T1 - Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

AU - Bell, A.

AU - Liu, R.

AU - Ponce, Fernando

AU - Amano, H.

AU - Akasaki, I.

AU - Cherns, D.

PY - 2003/1/20

Y1 - 2003/1/20

N2 - The microstructure and optical properties of AlGaN:Mg grown on patterned substrates were reported. It was suggested that the surface properties of the lateral facet inhibited the formation of these defects. Extended lattice defects present in the materials grown directly on the sapphire substrate were found to inhibit the near-band-edge emission.

AB - The microstructure and optical properties of AlGaN:Mg grown on patterned substrates were reported. It was suggested that the surface properties of the lateral facet inhibited the formation of these defects. Extended lattice defects present in the materials grown directly on the sapphire substrate were found to inhibit the near-band-edge emission.

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DO - 10.1063/1.1537517

M3 - Article

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EP - 351

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

Abstract

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