Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

A. Bell, R. Liu, Fernando Ponce, H. Amano, I. Akasaki, D. Cherns

Research output: Contribution to journalArticle

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Abstract

The microstructure and optical properties of AlGaN:Mg grown on patterned substrates were reported. It was suggested that the surface properties of the lateral facet inhibited the formation of these defects. Extended lattice defects present in the materials grown directly on the sapphire substrate were found to inhibit the near-band-edge emission.

Original languageEnglish (US)
Pages (from-to)349-351
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number3
DOIs
StatePublished - Jan 20 2003

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light emission
sapphire
microstructure
defects
surface properties
flat surfaces
optical properties

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire. / Bell, A.; Liu, R.; Ponce, Fernando; Amano, H.; Akasaki, I.; Cherns, D.

In: Applied Physics Letters, Vol. 82, No. 3, 20.01.2003, p. 349-351.

Research output: Contribution to journalArticle

Bell, A. ; Liu, R. ; Ponce, Fernando ; Amano, H. ; Akasaki, I. ; Cherns, D. / Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire. In: Applied Physics Letters. 2003 ; Vol. 82, No. 3. pp. 349-351.
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