Length mismatch in random semiconductor alloys. III. Crystalline and amorphous SiGe

Normand Mousseau, M. F. Thorpe

Research output: Contribution to journalArticle

64 Scopus citations

Abstract

In the third paper of this series on the length mismatch problem, we study binary semiconductor alloys in both their crystalline and amorphous forms. We have concentratred on SiGe alloys. Applying the theory developed in paper I, we obtain the mean length for both nearest and next-nearest neighbors as well as the nearest-neighbor length distribution for the crystalline alloy. We show that the theoretical results fall within the limits set by experiment. We check our analytical results against computer simulations. We examine the effect of amorphization on the internal strain, using the Wooten, Winer, and Weaire model, and find that the disorders due to the length mismatch and due to amorphization decouple.

Original languageEnglish (US)
Pages (from-to)15887-15893
Number of pages7
JournalPhysical Review B
Volume46
Issue number24
DOIs
StatePublished - Jan 1 1992

ASJC Scopus subject areas

  • Condensed Matter Physics

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