Abstract
In the third paper of this series on the length mismatch problem, we study binary semiconductor alloys in both their crystalline and amorphous forms. We have concentratred on SiGe alloys. Applying the theory developed in paper I, we obtain the mean length for both nearest and next-nearest neighbors as well as the nearest-neighbor length distribution for the crystalline alloy. We show that the theoretical results fall within the limits set by experiment. We check our analytical results against computer simulations. We examine the effect of amorphization on the internal strain, using the Wooten, Winer, and Weaire model, and find that the disorders due to the length mismatch and due to amorphization decouple.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 15887-15893 |
| Number of pages | 7 |
| Journal | Physical Review B |
| Volume | 46 |
| Issue number | 24 |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Length mismatch in random semiconductor alloys. III. Crystalline and amorphous SiGe. / Mousseau, Normand; Thorpe, Michael.
In: Physical Review B, Vol. 46, No. 24, 1992, p. 15887-15893.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Length mismatch in random semiconductor alloys. III. Crystalline and amorphous SiGe
AU - Mousseau, Normand
AU - Thorpe, Michael
PY - 1992
Y1 - 1992
N2 - In the third paper of this series on the length mismatch problem, we study binary semiconductor alloys in both their crystalline and amorphous forms. We have concentratred on SiGe alloys. Applying the theory developed in paper I, we obtain the mean length for both nearest and next-nearest neighbors as well as the nearest-neighbor length distribution for the crystalline alloy. We show that the theoretical results fall within the limits set by experiment. We check our analytical results against computer simulations. We examine the effect of amorphization on the internal strain, using the Wooten, Winer, and Weaire model, and find that the disorders due to the length mismatch and due to amorphization decouple.
AB - In the third paper of this series on the length mismatch problem, we study binary semiconductor alloys in both their crystalline and amorphous forms. We have concentratred on SiGe alloys. Applying the theory developed in paper I, we obtain the mean length for both nearest and next-nearest neighbors as well as the nearest-neighbor length distribution for the crystalline alloy. We show that the theoretical results fall within the limits set by experiment. We check our analytical results against computer simulations. We examine the effect of amorphization on the internal strain, using the Wooten, Winer, and Weaire model, and find that the disorders due to the length mismatch and due to amorphization decouple.
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U2 - 10.1103/PhysRevB.46.15887
DO - 10.1103/PhysRevB.46.15887
M3 - Article
VL - 46
SP - 15887
EP - 15893
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 24
ER -