LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability

Sayeed A. Badrudduza; Giby Samson; Lawrence T. Clark

doi:10.1109/VLSID.2007.96

LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability

Sayeed A. Badrudduza, Giby Samson, Lawrence T. Clark

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Highly scaled processes increase leakage and transistor variations, both of which are problematic for SRAM, which is pervasive in modern CMOS integrated circuits. Here, a six transistor SRAM cell is presented that does not suffer from reduced stability when reading. The cell also resides in a low leakage, voltage collapsed, low standby power mode when not being accessed. The cell circuit topology, layout, and impact on memory design are described. Simulation of operation on 130 and 90 nm technologies and with predictive technology models for 65 and 45 nm technologies demonstrate the leakage reduction and measurement on 130 nm demonstrates improved read stability.

Original language	English (US)
Title of host publication	Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems
Pages	621-626
Number of pages	6
DOIs	https://doi.org/10.1109/VLSID.2007.96
State	Published - Dec 1 2007
Event	20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07 - Bangalore, India Duration: Jan 6 2007 → Jan 10 2007

Publication series

Name	Proceedings of the IEEE International Conference on VLSI Design
ISSN (Print)	1063-9667

Other

Other	20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07
Country/Territory	India
City	Bangalore
Period	1/6/07 → 1/10/07

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/VLSID.2007.96

Cite this

Badrudduza, S. A., Samson, G., & Clark, L. T. (2007). LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. In Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (pp. 621-626). Article 4092111 (Proceedings of the IEEE International Conference on VLSI Design). https://doi.org/10.1109/VLSID.2007.96

LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. / Badrudduza, Sayeed A.; Samson, Giby; Clark, Lawrence T.
Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems. 2007. p. 621-626 4092111 (Proceedings of the IEEE International Conference on VLSI Design).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Badrudduza, SA, Samson, G & Clark, LT 2007, LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. in Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems., 4092111, Proceedings of the IEEE International Conference on VLSI Design, pp. 621-626, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07, Bangalore, India, 1/6/07. https://doi.org/10.1109/VLSID.2007.96

Badrudduza SA, Samson G, Clark LT. LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. In Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems. 2007. p. 621-626. 4092111. (Proceedings of the IEEE International Conference on VLSI Design). doi: 10.1109/VLSID.2007.96

Badrudduza, Sayeed A. ; Samson, Giby ; Clark, Lawrence T. / LCSRAM : A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems. 2007. pp. 621-626 (Proceedings of the IEEE International Conference on VLSI Design).

@inproceedings{dccccc4746274608bfde4124bd9ab97b,

title = "LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability",

abstract = "Highly scaled processes increase leakage and transistor variations, both of which are problematic for SRAM, which is pervasive in modern CMOS integrated circuits. Here, a six transistor SRAM cell is presented that does not suffer from reduced stability when reading. The cell also resides in a low leakage, voltage collapsed, low standby power mode when not being accessed. The cell circuit topology, layout, and impact on memory design are described. Simulation of operation on 130 and 90 nm technologies and with predictive technology models for 65 and 45 nm technologies demonstrate the leakage reduction and measurement on 130 nm demonstrates improved read stability.",

author = "Badrudduza, {Sayeed A.} and Giby Samson and Clark, {Lawrence T.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/VLSID.2007.96",

language = "English (US)",

isbn = "0769527620",

series = "Proceedings of the IEEE International Conference on VLSI Design",

pages = "621--626",

booktitle = "Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems",

note = "20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07 ; Conference date: 06-01-2007 Through 10-01-2007",

}

TY - GEN

T1 - LCSRAM

T2 - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07

AU - Badrudduza, Sayeed A.

AU - Samson, Giby

AU - Clark, Lawrence T.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Highly scaled processes increase leakage and transistor variations, both of which are problematic for SRAM, which is pervasive in modern CMOS integrated circuits. Here, a six transistor SRAM cell is presented that does not suffer from reduced stability when reading. The cell also resides in a low leakage, voltage collapsed, low standby power mode when not being accessed. The cell circuit topology, layout, and impact on memory design are described. Simulation of operation on 130 and 90 nm technologies and with predictive technology models for 65 and 45 nm technologies demonstrate the leakage reduction and measurement on 130 nm demonstrates improved read stability.

AB - Highly scaled processes increase leakage and transistor variations, both of which are problematic for SRAM, which is pervasive in modern CMOS integrated circuits. Here, a six transistor SRAM cell is presented that does not suffer from reduced stability when reading. The cell also resides in a low leakage, voltage collapsed, low standby power mode when not being accessed. The cell circuit topology, layout, and impact on memory design are described. Simulation of operation on 130 and 90 nm technologies and with predictive technology models for 65 and 45 nm technologies demonstrate the leakage reduction and measurement on 130 nm demonstrates improved read stability.

UR - http://www.scopus.com/inward/record.url?scp=47749148980&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47749148980&partnerID=8YFLogxK

U2 - 10.1109/VLSID.2007.96

DO - 10.1109/VLSID.2007.96

M3 - Conference contribution

AN - SCOPUS:47749148980

SN - 0769527620

SN - 9780769527628

T3 - Proceedings of the IEEE International Conference on VLSI Design

SP - 621

EP - 626

BT - Proceedings - 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems

Y2 - 6 January 2007 through 10 January 2007

ER -

LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this