LCSRAM

A leakage controlled six-transistor static random access memory cell with intrinsically high read stability

Sayeed A. Badrudduza, Giby Samson, Lawrence T. Clark

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Highly scaled processes increase leakage and transistor variations, both of which are problematic for SRAM, which is pervasive in modern CMOS integrated circuits. Here, a six transistor SRAM cell is presented that does not suffer from reduced stability when reading. The cell also resides in a low leakage, voltage collapsed, low standby power mode when not being accessed. The cell circuit topology, layout, and impact on memory design are described. Simulation of operation on 130 and 90 nm technologies and with predictive technology models for 65 and 45 nm technologies demonstrate the leakage reduction and measurement on 130 nm demonstrates improved read stability.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Conference on VLSI Design
Pages621-626
Number of pages6
DOIs
StatePublished - 2007
Event20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07 - Bangalore, India
Duration: Jan 6 2007Jan 10 2007

Other

Other20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07
CountryIndia
CityBangalore
Period1/6/071/10/07

Fingerprint

Transistors
Static random access storage
Data storage equipment
CMOS integrated circuits
Electric network topology
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Badrudduza, S. A., Samson, G., & Clark, L. T. (2007). LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. In Proceedings of the IEEE International Conference on VLSI Design (pp. 621-626). [4092111] https://doi.org/10.1109/VLSID.2007.96

LCSRAM : A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. / Badrudduza, Sayeed A.; Samson, Giby; Clark, Lawrence T.

Proceedings of the IEEE International Conference on VLSI Design. 2007. p. 621-626 4092111.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Badrudduza, SA, Samson, G & Clark, LT 2007, LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. in Proceedings of the IEEE International Conference on VLSI Design., 4092111, pp. 621-626, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07, Bangalore, India, 1/6/07. https://doi.org/10.1109/VLSID.2007.96
Badrudduza SA, Samson G, Clark LT. LCSRAM: A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. In Proceedings of the IEEE International Conference on VLSI Design. 2007. p. 621-626. 4092111 https://doi.org/10.1109/VLSID.2007.96
Badrudduza, Sayeed A. ; Samson, Giby ; Clark, Lawrence T. / LCSRAM : A leakage controlled six-transistor static random access memory cell with intrinsically high read stability. Proceedings of the IEEE International Conference on VLSI Design. 2007. pp. 621-626
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