Layerwise reaction at a buried interface

Peter Bennett, B. DeVries, I. K. Robinson, P. J. Eng

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Abstract

X-ray diffraction was used to monitor the in situ reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 . During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.

Original languageEnglish (US)
Pages (from-to)2539-2542
Number of pages4
JournalPhysical Review Letters
Volume69
Issue number17
DOIs
StatePublished - Jan 1 1992

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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