Layerwise reaction at a buried interface

Peter Bennett, B. DeVries, I. K. Robinson, P. J. Eng

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

X-ray diffraction was used to monitor the in situ reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 . During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.

Original languageEnglish (US)
Pages (from-to)2539-2542
Number of pages4
JournalPhysical Review Letters
Volume69
Issue number17
DOIs
StatePublished - 1992

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oscillations
room temperature
diffraction
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Layerwise reaction at a buried interface. / Bennett, Peter; DeVries, B.; Robinson, I. K.; Eng, P. J.

In: Physical Review Letters, Vol. 69, No. 17, 1992, p. 2539-2542.

Research output: Contribution to journalArticle

Bennett, P, DeVries, B, Robinson, IK & Eng, PJ 1992, 'Layerwise reaction at a buried interface', Physical Review Letters, vol. 69, no. 17, pp. 2539-2542. https://doi.org/10.1103/PhysRevLett.69.2539
Bennett, Peter ; DeVries, B. ; Robinson, I. K. ; Eng, P. J. / Layerwise reaction at a buried interface. In: Physical Review Letters. 1992 ; Vol. 69, No. 17. pp. 2539-2542.
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