Layer disordering of GaAs-AlGaAs superlattices by diffusion of laser-incorporated Si

J. E. Epler, F. A. Ponce, F. J. Endicott, T. L. Paoli

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Recently, a laser-scanning technique for patterning layerdisorderinghasbeen reported in which silicon impurities are incorporated bylaserirradiation into GaAs-AlGaAs heterostructures. The sample is subsequently annealed to diffuse the Si deep into the heterostructure. The GaAs-AlGaAs layers are locally intermixed by diffusion of the silicon impurities. In this report, this two-step process of laser-assisted disordering is studied in detail with several material characterization techniques. Scanning electron microscopy and secondary ion mass spectrometry are used to correlate the extent of the layer-disordered region with the presence of laser-incorporated Si and oxygen. Transmission electron microscopy (TEM) is used to obtain high resolution images of thedisordered/as-grown interface and to evaluate the crystallinity of the laser-affected material. TEM images allowthedetermination of the distribution of the Al and Ga constituents atthe interface between the impurity-disordered alloy and the as-grown crystal. The data indicate a more rapid Si diffusion in the GaAs layers relative to the Al-rich layers. The data are discussed in the context of device fabrication.

Original languageEnglish (US)
Pages (from-to)3439-3444
Number of pages6
JournalJournal of Applied Physics
Volume64
Issue number7
DOIs
StatePublished - Dec 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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