LATTICE RELAXATION IN THIN COMPOSITIONALLY-MODULATED SEMICONDUCTOR FILMS.

J. M. Gibson, M. M.J. Treacy, J. C. Bean, R. Hull

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of lattice relaxation in thin samples of compositionally modulated semiconductors are discussed. It is shown that even for very weak strain modulations ( less than 10** minus **3) strong diffraction contrast can occur. This is the origin of some 'tweed'-like contrast seen in quaternary semiconductor alloys. Relaxation can also affect the lattice parameter in strained-layer superlattices and can explain some anomalous reports. Finally, effects on high-resolution imaging of interfaces between strained-layers are considered.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages277-281
Number of pages5
Edition76
StatePublished - Dec 1 1985
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number76
ISSN (Print)0373-0751

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gibson, J. M., Treacy, M. M. J., Bean, J. C., & Hull, R. (1985). LATTICE RELAXATION IN THIN COMPOSITIONALLY-MODULATED SEMICONDUCTOR FILMS. In Institute of Physics Conference Series (76 ed., pp. 277-281). (Institute of Physics Conference Series; No. 76).