32 Scopus citations

Abstract

A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm−2 for the stacking-fault energy in silicon.

Original languageEnglish (US)
Pages (from-to)59-63
Number of pages5
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume39
Issue number1
DOIs
StatePublished - Jan 1979

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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