Lateral Mode Stabilization of Diode Lasers by Means of Apertured Facet Reflectors

F. A. Ponce; D. R. Scifres; W. Streifer; G. A.N. Connell

doi:10.1109/JQE.1979.1069916

Lateral Mode Stabilization of Diode Lasers by Means of Apertured Facet Reflectors

F. A. Ponce, D. R. Scifres, W. Streifer, G. A.N. Connell

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report the design, fabrication, and testing of an apertured facet reflector for a GaAs/GaAlAs room temperature CW diode laser. The reflector, composed of Al₂O₃, Si, Te, and Al₂O₃ layers with the Te ablated by the laser beam itself at the mode center, has a higher reflectivity at its center compared to the unablated surrounding region. This nonuniform reflectivity acts to stabilize laterally the fundamental mode and substantially increase the “kink” level. Specifically, the “kink” level of a large optical cavity (LOC) heterostructure laser with an 8 µm wide stripe was increased from ≈10 mW before coating to above 30 mW by the addition of the apertured reflector.

Original language	English (US)
Pages (from-to)	1205-1207
Number of pages	3
Journal	IEEE Journal of Quantum Electronics
Volume	15
Issue number	11
DOIs	https://doi.org/10.1109/JQE.1979.1069916
State	Published - Nov 1979
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.1979.1069916

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title = "Lateral Mode Stabilization of Diode Lasers by Means of Apertured Facet Reflectors",

abstract = "We report the design, fabrication, and testing of an apertured facet reflector for a GaAs/GaAlAs room temperature CW diode laser. The reflector, composed of Al2O3, Si, Te, and Al2O3 layers with the Te ablated by the laser beam itself at the mode center, has a higher reflectivity at its center compared to the unablated surrounding region. This nonuniform reflectivity acts to stabilize laterally the fundamental mode and substantially increase the “kink” level. Specifically, the “kink” level of a large optical cavity (LOC) heterostructure laser with an 8 µm wide stripe was increased from ≈10 mW before coating to above 30 mW by the addition of the apertured reflector.",

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year = "1979",

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doi = "10.1109/JQE.1979.1069916",

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T1 - Lateral Mode Stabilization of Diode Lasers by Means of Apertured Facet Reflectors

AU - Ponce, F. A.

AU - Scifres, D. R.

AU - Streifer, W.

AU - Connell, G. A.N.

PY - 1979/11

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N2 - We report the design, fabrication, and testing of an apertured facet reflector for a GaAs/GaAlAs room temperature CW diode laser. The reflector, composed of Al2O3, Si, Te, and Al2O3 layers with the Te ablated by the laser beam itself at the mode center, has a higher reflectivity at its center compared to the unablated surrounding region. This nonuniform reflectivity acts to stabilize laterally the fundamental mode and substantially increase the “kink” level. Specifically, the “kink” level of a large optical cavity (LOC) heterostructure laser with an 8 µm wide stripe was increased from ≈10 mW before coating to above 30 mW by the addition of the apertured reflector.

AB - We report the design, fabrication, and testing of an apertured facet reflector for a GaAs/GaAlAs room temperature CW diode laser. The reflector, composed of Al2O3, Si, Te, and Al2O3 layers with the Te ablated by the laser beam itself at the mode center, has a higher reflectivity at its center compared to the unablated surrounding region. This nonuniform reflectivity acts to stabilize laterally the fundamental mode and substantially increase the “kink” level. Specifically, the “kink” level of a large optical cavity (LOC) heterostructure laser with an 8 µm wide stripe was increased from ≈10 mW before coating to above 30 mW by the addition of the apertured reflector.

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Lateral Mode Stabilization of Diode Lasers by Means of Apertured Facet Reflectors

Abstract

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