Lateral Mode Stabilization of Diode Lasers by Means of Apertured Facet Reflectors

F. A. Ponce, D. R. Scifres, W. Streifer, G. A.N. Connell

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We report the design, fabrication, and testing of an apertured facet reflector for a GaAs/GaAlAs room temperature CW diode laser. The reflector, composed of Al2O3, Si, Te, and Al2O3 layers with the Te ablated by the laser beam itself at the mode center, has a higher reflectivity at its center compared to the unablated surrounding region. This nonuniform reflectivity acts to stabilize laterally the fundamental mode and substantially increase the “kink” level. Specifically, the “kink” level of a large optical cavity (LOC) heterostructure laser with an 8 µm wide stripe was increased from ≈10 mW before coating to above 30 mW by the addition of the apertured reflector.

Original languageEnglish (US)
Pages (from-to)1205-1207
Number of pages3
JournalIEEE Journal of Quantum Electronics
Volume15
Issue number11
DOIs
StatePublished - Nov 1979
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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