Lateral and vertical transistors using the Algan/GAN Heterostructure

Srabanti Chowdhury, Umesh K. Mishra

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

Original languageEnglish (US)
Article number6605590
Pages (from-to)3060-3066
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number10
DOIs
StatePublished - 2013

Fingerprint

Heterojunctions
Transistors
Gallium nitride
Heat sinks
High electron mobility transistors
Motion control
Power electronics
Silicon carbide
Air conditioning
Conversion efficiency
Information technology
Costs
Electricity
Lighting
Topology
Electric potential
Industry
Power markets
aluminum gallium nitride
gallium nitride

Keywords

  • Gallium nitride (GaN)
  • lateral transistors
  • vertical transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lateral and vertical transistors using the Algan/GAN Heterostructure. / Chowdhury, Srabanti; Mishra, Umesh K.

In: IEEE Transactions on Electron Devices, Vol. 60, No. 10, 6605590, 2013, p. 3060-3066.

Research output: Contribution to journalArticle

Chowdhury, Srabanti ; Mishra, Umesh K. / Lateral and vertical transistors using the Algan/GAN Heterostructure. In: IEEE Transactions on Electron Devices. 2013 ; Vol. 60, No. 10. pp. 3060-3066.
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