Laser wafering

Stuart Bowden, James Lebeau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A new technique for the laser wafering of semiconductors is presented using sub surface laser engraving. In the laser wafering process, a high intensity laser is used to form sub-surface etch pits or defects at multiple depths in an ingot. This allows a rapid, controllable approach to the formation of wafers with thickness ranging from below 10 microns to over 100 microns. Laser wafering provides a way to cut a a brick of silicon into multiple wafers with minimal kerf loss and the possibility to dramatically lower the cost of silicon solar cell production. The techniques relies on the principle that many materials, including silicon and other semiconductors, have a non-linear absorption co-efficient with intensity, such that sub-band gap light is absorbed above a given intensity. This allows a high intensity laser to be focused at an arbitrary point below the surface, and allowing absorption of the high intensity light only at the focal point.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1826-1829
Number of pages4
DOIs
StatePublished - Nov 26 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Bowden, S., & Lebeau, J. (2012). Laser wafering. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 1826-1829). [6317948] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317948