Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor

J. E. Epler; R. D. Bringans; F. A. Ponce; G. B. Anderson; D. W. Treat; T. L. Paoli

doi:10.1016/0169-4332(89)90251-1

Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor

J. E. Epler, R. D. Bringans, F. A. Ponce, G. B. Anderson, D. W. Treat, T. L. Paoli

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Laser patterned desorption (LPD) is a versatile new in situ etching technique developed for optoelectronic device fabrication. With this technique, laser heating is used to locally desorb GaAs or AlGaAs quantum well (QW) layers during a pause in the crystal growth. After the LPD step, crystal growth is resumed, burying the patterned quantum layer within the crystal. By applying LPD to QW active layers, multiple wavelength diode lasers have been produced. Transmission electron microscopy (TEM) and photoluminescence are used to quantify the lateral profile of the QW thickness. The high resolution TEM shows the presence of nm-scale inclusions near the region where desorption took place. The inclusions are tentatively identified as Al remaining from the desorption of AlGaAs.

Original language	English (US)
Pages (from-to)	432-438
Number of pages	7
Journal	Applied Surface Science
Volume	43
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(89)90251-1
State	Published - Dec 2 1989
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(89)90251-1

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title = "Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor",

abstract = "Laser patterned desorption (LPD) is a versatile new in situ etching technique developed for optoelectronic device fabrication. With this technique, laser heating is used to locally desorb GaAs or AlGaAs quantum well (QW) layers during a pause in the crystal growth. After the LPD step, crystal growth is resumed, burying the patterned quantum layer within the crystal. By applying LPD to QW active layers, multiple wavelength diode lasers have been produced. Transmission electron microscopy (TEM) and photoluminescence are used to quantify the lateral profile of the QW thickness. The high resolution TEM shows the presence of nm-scale inclusions near the region where desorption took place. The inclusions are tentatively identified as Al remaining from the desorption of AlGaAs.",

author = "Epler, {J. E.} and Bringans, {R. D.} and Ponce, {F. A.} and Anderson, {G. B.} and Treat, {D. W.} and Paoli, {T. L.}",

note = "Funding Information: The authorws ish to thank S. Nelson, F. Endicott, and E. Taggartf or technicaal ssistanceH.e lp-ful discussionws ith N. Connell, and P.D. Dapkus are gratefullya cknowledgedT.h is work is sup-portedi n part by the DefenseA dvancedR esearch ProjectsA gency(J.D. Murphy).",

year = "1989",

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doi = "10.1016/0169-4332(89)90251-1",

language = "English (US)",

volume = "43",

pages = "432--438",

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T1 - Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor

AU - Epler, J. E.

AU - Bringans, R. D.

AU - Ponce, F. A.

AU - Anderson, G. B.

AU - Treat, D. W.

AU - Paoli, T. L.

N1 - Funding Information: The authorws ish to thank S. Nelson, F. Endicott, and E. Taggartf or technicaal ssistanceH.e lp-ful discussionws ith N. Connell, and P.D. Dapkus are gratefullya cknowledgedT.h is work is sup-portedi n part by the DefenseA dvancedR esearch ProjectsA gency(J.D. Murphy).

PY - 1989/12/2

Y1 - 1989/12/2

N2 - Laser patterned desorption (LPD) is a versatile new in situ etching technique developed for optoelectronic device fabrication. With this technique, laser heating is used to locally desorb GaAs or AlGaAs quantum well (QW) layers during a pause in the crystal growth. After the LPD step, crystal growth is resumed, burying the patterned quantum layer within the crystal. By applying LPD to QW active layers, multiple wavelength diode lasers have been produced. Transmission electron microscopy (TEM) and photoluminescence are used to quantify the lateral profile of the QW thickness. The high resolution TEM shows the presence of nm-scale inclusions near the region where desorption took place. The inclusions are tentatively identified as Al remaining from the desorption of AlGaAs.

AB - Laser patterned desorption (LPD) is a versatile new in situ etching technique developed for optoelectronic device fabrication. With this technique, laser heating is used to locally desorb GaAs or AlGaAs quantum well (QW) layers during a pause in the crystal growth. After the LPD step, crystal growth is resumed, burying the patterned quantum layer within the crystal. By applying LPD to QW active layers, multiple wavelength diode lasers have been produced. Transmission electron microscopy (TEM) and photoluminescence are used to quantify the lateral profile of the QW thickness. The high resolution TEM shows the presence of nm-scale inclusions near the region where desorption took place. The inclusions are tentatively identified as Al remaining from the desorption of AlGaAs.

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JO - Applied Surface Science

JF - Applied Surface Science

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ER -

Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor

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ASJC Scopus subject areas

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