Laser-frequency dependence of raman modes in GaAs-AlAs superlattices

G. S. Spencer; Jose Menendez; L. N. Pfeiffer; K. W. West

doi:10.1016/0038-1098(95)00595-1

Laser-frequency dependence of raman modes in GaAs-AlAs superlattices

G. S. Spencer, Jose Menendez, L. N. Pfeiffer, K. W. West

Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The excitation frequency dependence of the Raman spectra in short-period GaAs-AlAs superlattices is studied. The off-resonance Raman spectra can be explained by a disorder-induced breakdown of wave-vector conservation leading to the contribution of small magnitude, random orientation wave-vector phonons. As extreme resonance is approached, double-resonance effects cause phonons with large magnitude, preferentially in-plane wavevectors to dominate the Raman spectrum.

Original language	English (US)
Pages (from-to)	21-25
Number of pages	5
Journal	Solid State Communications
Volume	97
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(95)00595-1
State	Published - Jan 1996

Keywords

A. Semiconductors
D. Optical properties
D. Phonons
E. Ineleastic light scattering

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(95)00595-1

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title = "Laser-frequency dependence of raman modes in GaAs-AlAs superlattices",

abstract = "The excitation frequency dependence of the Raman spectra in short-period GaAs-AlAs superlattices is studied. The off-resonance Raman spectra can be explained by a disorder-induced breakdown of wave-vector conservation leading to the contribution of small magnitude, random orientation wave-vector phonons. As extreme resonance is approached, double-resonance effects cause phonons with large magnitude, preferentially in-plane wavevectors to dominate the Raman spectrum.",

keywords = "A. Semiconductors, D. Optical properties, D. Phonons, E. Ineleastic light scattering",

author = "Spencer, {G. S.} and Jose Menendez and Pfeiffer, {L. N.} and West, {K. W.}",

note = "Funding Information: Acknowlegements - This work has also been supported by the National ScienceF oundation under grants DMR-88-14918, DMR 90-58343 and DMR 91-21567.",

year = "1996",

month = jan,

doi = "10.1016/0038-1098(95)00595-1",

language = "English (US)",

volume = "97",

pages = "21--25",

journal = "Solid State Communications",

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TY - JOUR

T1 - Laser-frequency dependence of raman modes in GaAs-AlAs superlattices

AU - Spencer, G. S.

AU - Menendez, Jose

AU - Pfeiffer, L. N.

AU - West, K. W.

N1 - Funding Information: Acknowlegements - This work has also been supported by the National ScienceF oundation under grants DMR-88-14918, DMR 90-58343 and DMR 91-21567.

PY - 1996/1

Y1 - 1996/1

N2 - The excitation frequency dependence of the Raman spectra in short-period GaAs-AlAs superlattices is studied. The off-resonance Raman spectra can be explained by a disorder-induced breakdown of wave-vector conservation leading to the contribution of small magnitude, random orientation wave-vector phonons. As extreme resonance is approached, double-resonance effects cause phonons with large magnitude, preferentially in-plane wavevectors to dominate the Raman spectrum.

AB - The excitation frequency dependence of the Raman spectra in short-period GaAs-AlAs superlattices is studied. The off-resonance Raman spectra can be explained by a disorder-induced breakdown of wave-vector conservation leading to the contribution of small magnitude, random orientation wave-vector phonons. As extreme resonance is approached, double-resonance effects cause phonons with large magnitude, preferentially in-plane wavevectors to dominate the Raman spectrum.

KW - A. Semiconductors

KW - D. Optical properties

KW - D. Phonons

KW - E. Ineleastic light scattering

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DO - 10.1016/0038-1098(95)00595-1

M3 - Article

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SN - 0038-1098

VL - 97

SP - 21

EP - 25

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Laser-frequency dependence of raman modes in GaAs-AlAs superlattices

Abstract

Keywords

ASJC Scopus subject areas

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