Laser-frequency dependence of raman modes in GaAs-AlAs superlattices

G. S. Spencer, Jose Menendez, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The excitation frequency dependence of the Raman spectra in short-period GaAs-AlAs superlattices is studied. The off-resonance Raman spectra can be explained by a disorder-induced breakdown of wave-vector conservation leading to the contribution of small magnitude, random orientation wave-vector phonons. As extreme resonance is approached, double-resonance effects cause phonons with large magnitude, preferentially in-plane wavevectors to dominate the Raman spectrum.

Original languageEnglish (US)
Pages (from-to)21-25
Number of pages5
JournalSolid State Communications
Volume97
Issue number1
DOIs
StatePublished - Jan 1996

Keywords

  • A. Semiconductors
  • D. Optical properties
  • D. Phonons
  • E. Ineleastic light scattering

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Laser-frequency dependence of raman modes in GaAs-AlAs superlattices'. Together they form a unique fingerprint.

  • Cite this