Laser crystallization of transparent AZO films on sapphire with high electron mobility for photo-application

Qiong Nian, Martin Y. Zhang, Bradley D. Schwartz, Gary J. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transparent and conductive alumina-doped ZnO (AZO) films were deposited on sapphire substrates at room temperature by room temperature pulsed laser deposition (PLD) and then followed by laser crystallization at 500K. As implied by the Multiphysics Simulation, X-ray diffraction spectra and morphological characterizations show grain growth and crystallinity enhancement during the crystallization process, resulting in less film internal imperfections. With lower internal defects, higher conductivity and transmittance were expected. Electrical and optical measurements show that the crystallization process dramatically improves the electron mobility and conductivity while the carrier concentration decreases, which in turn increases infrared transmittance. Under an optimal laser crystallization condition, AZO films with low resistivity of 9.90×10-4 Ω-cm and a high electron mobility of 79 cm2/Vs. UV-Vis-IR transmittance spectrum shows the laser crystallization significantly enhanced the AZO film transparency to 6000nm with over 60% transmittance. And the crystallized AZO film shows 36% higher transmittance than room temperature PLD deposited AZO film over 900-5000nm wavelength range.

Original languageEnglish (US)
Title of host publicationASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference
PublisherWeb Portal ASME (American Society of Mechanical Engineers)
Volume2
ISBN (Electronic)9780791845813
DOIs
StatePublished - 2014
Externally publishedYes
EventASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference - Detroit, United States
Duration: Jun 9 2014Jun 13 2014

Other

OtherASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference
CountryUnited States
CityDetroit
Period6/9/146/13/14

Fingerprint

Electron mobility
Sapphire
Alumina
Crystallization
Lasers
Pulsed laser deposition
Defects
Grain growth
Transparency
Temperature
Carrier concentration
Infrared radiation
X ray diffraction
Wavelength
Substrates

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering

Cite this

Nian, Q., Zhang, M. Y., Schwartz, B. D., & Cheng, G. J. (2014). Laser crystallization of transparent AZO films on sapphire with high electron mobility for photo-application. In ASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference (Vol. 2). [V002T02A093] Web Portal ASME (American Society of Mechanical Engineers). https://doi.org/10.1115/MSEC2014-4051

Laser crystallization of transparent AZO films on sapphire with high electron mobility for photo-application. / Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

ASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference. Vol. 2 Web Portal ASME (American Society of Mechanical Engineers), 2014. V002T02A093.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nian, Q, Zhang, MY, Schwartz, BD & Cheng, GJ 2014, Laser crystallization of transparent AZO films on sapphire with high electron mobility for photo-application. in ASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference. vol. 2, V002T02A093, Web Portal ASME (American Society of Mechanical Engineers), ASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference, Detroit, United States, 6/9/14. https://doi.org/10.1115/MSEC2014-4051
Nian Q, Zhang MY, Schwartz BD, Cheng GJ. Laser crystallization of transparent AZO films on sapphire with high electron mobility for photo-application. In ASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference. Vol. 2. Web Portal ASME (American Society of Mechanical Engineers). 2014. V002T02A093 https://doi.org/10.1115/MSEC2014-4051
Nian, Qiong ; Zhang, Martin Y. ; Schwartz, Bradley D. ; Cheng, Gary J. / Laser crystallization of transparent AZO films on sapphire with high electron mobility for photo-application. ASME 2014 International Manufacturing Science and Engineering Conference, MSEC 2014 Collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference. Vol. 2 Web Portal ASME (American Society of Mechanical Engineers), 2014.
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abstract = "Transparent and conductive alumina-doped ZnO (AZO) films were deposited on sapphire substrates at room temperature by room temperature pulsed laser deposition (PLD) and then followed by laser crystallization at 500K. As implied by the Multiphysics Simulation, X-ray diffraction spectra and morphological characterizations show grain growth and crystallinity enhancement during the crystallization process, resulting in less film internal imperfections. With lower internal defects, higher conductivity and transmittance were expected. Electrical and optical measurements show that the crystallization process dramatically improves the electron mobility and conductivity while the carrier concentration decreases, which in turn increases infrared transmittance. Under an optimal laser crystallization condition, AZO films with low resistivity of 9.90×10-4 Ω-cm and a high electron mobility of 79 cm2/Vs. UV-Vis-IR transmittance spectrum shows the laser crystallization significantly enhanced the AZO film transparency to 6000nm with over 60{\%} transmittance. And the crystallized AZO film shows 36{\%} higher transmittance than room temperature PLD deposited AZO film over 900-5000nm wavelength range.",
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