Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells

J. Menéndez, A. Pinczuk, D. J. Werder, S. K. Sputz, R. C. Miller, D. L. Sivco, A. Y. Cho

Research output: Contribution to journalArticle

96 Scopus citations

Abstract

We report a determination of band offsets in strained-layer InxGa1-xAs-GaAs quantum wells lattice-matched to GaAs. Using a light-scattering method, we find a large offset for the averaged valence bands, which extrapolates to <>Ev,av=0.49 eV in the InAs-GaAs system. This vlaue contradicts previous experimental determinations but agrees with predictions of theories that consider charge-transfer effects at the interface. It follows from some of these theories that <>Ev,av has a surprisingly strong uniaxial strain dependence, a fact that is consistent with our experimental result. Our light-scattering experiment leads to a new band structure for the InxGa1-xAs-GaAs system lattice-matched to GaAs in which the ground state for light holes is localized in the InxGa1-xAs layers. This conclusion is supported by photoluminescence excitation experiments.

Original languageEnglish (US)
Pages (from-to)8165-8168
Number of pages4
JournalPhysical Review B
Volume36
Issue number15
DOIs
StatePublished - Jan 1 1987
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Menéndez, J., Pinczuk, A., Werder, D. J., Sputz, S. K., Miller, R. C., Sivco, D. L., & Cho, A. Y. (1987). Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells. Physical Review B, 36(15), 8165-8168. https://doi.org/10.1103/PhysRevB.36.8165