Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells

Jose Menendez, A. Pinczuk, D. J. Werder, S. K. Sputz, R. C. Miller, D. L. Sivco, A. Y. Cho

Research output: Contribution to journalArticle

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Abstract

We report a determination of band offsets in strained-layer InxGa1-xAs-GaAs quantum wells lattice-matched to GaAs. Using a light-scattering method, we find a large offset for the averaged valence bands, which extrapolates to <>Ev,av=0.49 eV in the InAs-GaAs system. This vlaue contradicts previous experimental determinations but agrees with predictions of theories that consider charge-transfer effects at the interface. It follows from some of these theories that <>Ev,av has a surprisingly strong uniaxial strain dependence, a fact that is consistent with our experimental result. Our light-scattering experiment leads to a new band structure for the InxGa1-xAs-GaAs system lattice-matched to GaAs in which the ground state for light holes is localized in the InxGa1-xAs layers. This conclusion is supported by photoluminescence excitation experiments.

Original languageEnglish (US)
Pages (from-to)8165-8168
Number of pages4
JournalPhysical Review B
Volume36
Issue number15
DOIs
StatePublished - 1987
Externally publishedYes

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Valence bands
Light scattering
Semiconductor quantum wells
quantum wells
valence
light scattering
Crystal lattices
Band structure
Ground state
Charge transfer
Photoluminescence
axial strain
Experiments
charge transfer
photoluminescence
ground state
predictions
excitation
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Menendez, J., Pinczuk, A., Werder, D. J., Sputz, S. K., Miller, R. C., Sivco, D. L., & Cho, A. Y. (1987). Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells. Physical Review B, 36(15), 8165-8168. https://doi.org/10.1103/PhysRevB.36.8165

Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells. / Menendez, Jose; Pinczuk, A.; Werder, D. J.; Sputz, S. K.; Miller, R. C.; Sivco, D. L.; Cho, A. Y.

In: Physical Review B, Vol. 36, No. 15, 1987, p. 8165-8168.

Research output: Contribution to journalArticle

Menendez, J, Pinczuk, A, Werder, DJ, Sputz, SK, Miller, RC, Sivco, DL & Cho, AY 1987, 'Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells', Physical Review B, vol. 36, no. 15, pp. 8165-8168. https://doi.org/10.1103/PhysRevB.36.8165
Menendez, Jose ; Pinczuk, A. ; Werder, D. J. ; Sputz, S. K. ; Miller, R. C. ; Sivco, D. L. ; Cho, A. Y. / Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells. In: Physical Review B. 1987 ; Vol. 36, No. 15. pp. 8165-8168.
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