Large-signal modeling of SOI MESFETs

A. Balijepalli, R. Vijayaraghavan, J. Ervin, J. Yang, S. K. Islam, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SOI MESFETs fabricated using a commercial SOI CMOS process [1] demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. These features make the SOI MESFETs an attractive RF power amplifiers candidate. However, a MESFET-based PA design for RF integrated circuit applications requires an accurate largesignal device model. We propose a large-signal modeling strategy for the SOI MESFETS using widely available GaAs based MESFET models for initial model development. A measurement-based approach is then used to adapt the initial model to a TOM3 model [2] to represent the SOI MESFETs. We have extracted a small signal model using s-parameters measured up to 8 GHz under different bias conditions and developed a charge-based large signal model for the device. The models can be used in commercial, large-signal circuit simulators.

Original languageEnglish (US)
Title of host publication2005 International Semiconductor Device Research Symposium
Pages446-447
Number of pages2
StatePublished - Dec 1 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005Dec 9 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period12/7/0512/9/05

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Balijepalli, A., Vijayaraghavan, R., Ervin, J., Yang, J., Islam, S. K., & Thornton, T. (2005). Large-signal modeling of SOI MESFETs. In 2005 International Semiconductor Device Research Symposium (pp. 446-447). [1596178] (2005 International Semiconductor Device Research Symposium; Vol. 2005).