Large-signal modeling of SOI MESFETs

A. Balijepalli, R. Vijayaraghavan, J. Ervin, J. Yang, S. K. Islam, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SOI MESFETs fabricated using a commercial SOI CMOS process [1] demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. These features make the SOI MESFETs an attractive RF power amplifiers candidate. However, a MESFET-based PA design for RF integrated circuit applications requires an accurate largesignal device model. We propose a large-signal modeling strategy for the SOI MESFETS using widely available GaAs based MESFET models for initial model development. A measurement-based approach is then used to adapt the initial model to a TOM3 model [2] to represent the SOI MESFETs. We have extracted a small signal model using s-parameters measured up to 8 GHz under different bias conditions and developed a charge-based large signal model for the device. The models can be used in commercial, large-signal circuit simulators.

Original languageEnglish (US)
Title of host publication2005 International Semiconductor Device Research Symposium
Pages446-447
Number of pages2
Volume2005
StatePublished - 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005Dec 9 2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period12/7/0512/9/05

Fingerprint

Electric breakdown
Power amplifiers
Integrated circuits
Simulators
Networks (circuits)
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Balijepalli, A., Vijayaraghavan, R., Ervin, J., Yang, J., Islam, S. K., & Thornton, T. (2005). Large-signal modeling of SOI MESFETs. In 2005 International Semiconductor Device Research Symposium (Vol. 2005, pp. 446-447). [1596178]

Large-signal modeling of SOI MESFETs. / Balijepalli, A.; Vijayaraghavan, R.; Ervin, J.; Yang, J.; Islam, S. K.; Thornton, Trevor.

2005 International Semiconductor Device Research Symposium. Vol. 2005 2005. p. 446-447 1596178.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Balijepalli, A, Vijayaraghavan, R, Ervin, J, Yang, J, Islam, SK & Thornton, T 2005, Large-signal modeling of SOI MESFETs. in 2005 International Semiconductor Device Research Symposium. vol. 2005, 1596178, pp. 446-447, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 12/7/05.
Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton T. Large-signal modeling of SOI MESFETs. In 2005 International Semiconductor Device Research Symposium. Vol. 2005. 2005. p. 446-447. 1596178
Balijepalli, A. ; Vijayaraghavan, R. ; Ervin, J. ; Yang, J. ; Islam, S. K. ; Thornton, Trevor. / Large-signal modeling of SOI MESFETs. 2005 International Semiconductor Device Research Symposium. Vol. 2005 2005. pp. 446-447
@inproceedings{f30e075933c74ee1a66008915c1d1e2f,
title = "Large-signal modeling of SOI MESFETs",
abstract = "SOI MESFETs fabricated using a commercial SOI CMOS process [1] demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. These features make the SOI MESFETs an attractive RF power amplifiers candidate. However, a MESFET-based PA design for RF integrated circuit applications requires an accurate largesignal device model. We propose a large-signal modeling strategy for the SOI MESFETS using widely available GaAs based MESFET models for initial model development. A measurement-based approach is then used to adapt the initial model to a TOM3 model [2] to represent the SOI MESFETs. We have extracted a small signal model using s-parameters measured up to 8 GHz under different bias conditions and developed a charge-based large signal model for the device. The models can be used in commercial, large-signal circuit simulators.",
author = "A. Balijepalli and R. Vijayaraghavan and J. Ervin and J. Yang and Islam, {S. K.} and Trevor Thornton",
year = "2005",
language = "English (US)",
isbn = "1424400848",
volume = "2005",
pages = "446--447",
booktitle = "2005 International Semiconductor Device Research Symposium",

}

TY - GEN

T1 - Large-signal modeling of SOI MESFETs

AU - Balijepalli, A.

AU - Vijayaraghavan, R.

AU - Ervin, J.

AU - Yang, J.

AU - Islam, S. K.

AU - Thornton, Trevor

PY - 2005

Y1 - 2005

N2 - SOI MESFETs fabricated using a commercial SOI CMOS process [1] demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. These features make the SOI MESFETs an attractive RF power amplifiers candidate. However, a MESFET-based PA design for RF integrated circuit applications requires an accurate largesignal device model. We propose a large-signal modeling strategy for the SOI MESFETS using widely available GaAs based MESFET models for initial model development. A measurement-based approach is then used to adapt the initial model to a TOM3 model [2] to represent the SOI MESFETs. We have extracted a small signal model using s-parameters measured up to 8 GHz under different bias conditions and developed a charge-based large signal model for the device. The models can be used in commercial, large-signal circuit simulators.

AB - SOI MESFETs fabricated using a commercial SOI CMOS process [1] demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. These features make the SOI MESFETs an attractive RF power amplifiers candidate. However, a MESFET-based PA design for RF integrated circuit applications requires an accurate largesignal device model. We propose a large-signal modeling strategy for the SOI MESFETS using widely available GaAs based MESFET models for initial model development. A measurement-based approach is then used to adapt the initial model to a TOM3 model [2] to represent the SOI MESFETs. We have extracted a small signal model using s-parameters measured up to 8 GHz under different bias conditions and developed a charge-based large signal model for the device. The models can be used in commercial, large-signal circuit simulators.

UR - http://www.scopus.com/inward/record.url?scp=33847207775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847207775&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847207775

SN - 1424400848

SN - 9781424400843

VL - 2005

SP - 446

EP - 447

BT - 2005 International Semiconductor Device Research Symposium

ER -