TY - GEN
T1 - Large-signal modeling of SOI MESFETs
AU - Balijepalli, A.
AU - Vijayaraghavan, R.
AU - Ervin, J.
AU - Yang, J.
AU - Islam, S. K.
AU - Thornton, Trevor
N1 - Funding Information:
The work described in this paper was carried out under a contract with the Air Force Research Laboratory, the Defense Advanced Research Projects Agency, and for the Jet Propulsion Laboratory, California Institute of Technology. Appendix A
PY - 2005
Y1 - 2005
N2 - SOI MESFETs fabricated using a commercial SOI CMOS process [1] demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. These features make the SOI MESFETs an attractive RF power amplifiers candidate. However, a MESFET-based PA design for RF integrated circuit applications requires an accurate largesignal device model. We propose a large-signal modeling strategy for the SOI MESFETS using widely available GaAs based MESFET models for initial model development. A measurement-based approach is then used to adapt the initial model to a TOM3 model [2] to represent the SOI MESFETs. We have extracted a small signal model using s-parameters measured up to 8 GHz under different bias conditions and developed a charge-based large signal model for the device. The models can be used in commercial, large-signal circuit simulators.
AB - SOI MESFETs fabricated using a commercial SOI CMOS process [1] demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. These features make the SOI MESFETs an attractive RF power amplifiers candidate. However, a MESFET-based PA design for RF integrated circuit applications requires an accurate largesignal device model. We propose a large-signal modeling strategy for the SOI MESFETS using widely available GaAs based MESFET models for initial model development. A measurement-based approach is then used to adapt the initial model to a TOM3 model [2] to represent the SOI MESFETs. We have extracted a small signal model using s-parameters measured up to 8 GHz under different bias conditions and developed a charge-based large signal model for the device. The models can be used in commercial, large-signal circuit simulators.
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M3 - Conference contribution
AN - SCOPUS:33847207775
SN - 1424400848
SN - 9781424400843
T3 - 2005 International Semiconductor Device Research Symposium
SP - 446
EP - 447
BT - 2005 International Semiconductor Device Research Symposium
T2 - 2005 International Semiconductor Device Research Symposium
Y2 - 7 December 2005 through 9 December 2005
ER -