Large-signal modeling of SOI MESFETs

A. Balijepalli, R. Vijayaraghavan, J. Ervin, J. Yang, S. K. Islam, Trevor Thornton

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

It has been demonstrated that sub-micron metal-semiconductor field-effect transistors (MESFETs) can be fabricated using a commercial 3.5 V silicon-on-insulator (SOI) CMOS foundry with no changes to the CMOS process flow. The SOI MESFETs demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. If the high voltage capability is to be exploited in radio frequency integrated circuits it is important to develop an accurate empirical model of the device. This paper presents the SPICE model development of the SOI MESFET. A measurement-based approach is used to customize a commercially available, large-signal TOM3 MESFET model. Using the TOM3 model, an SOI MESFET Colpitts oscillator operating at 1.5 GHz has been simulated with an output swing of 7 V to illustrate the high voltage RF applications of the device.

Original languageEnglish (US)
Pages (from-to)943-950
Number of pages8
JournalSolid-State Electronics
Volume50
Issue number6
DOIs
StatePublished - Jun 1 2006

Keywords

  • Large-signal model
  • MESFETs
  • SPICE model
  • Silicon-on-insulator
  • TOM3 capacitance model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Balijepalli, A., Vijayaraghavan, R., Ervin, J., Yang, J., Islam, S. K., & Thornton, T. (2006). Large-signal modeling of SOI MESFETs. Solid-State Electronics, 50(6), 943-950. https://doi.org/10.1016/j.sse.2006.05.012