Large-signal modeling of SOI MESFETs

A. Balijepalli, R. Vijayaraghavan, J. Ervin, J. Yang, S. K. Islam, Trevor Thornton

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

It has been demonstrated that sub-micron metal-semiconductor field-effect transistors (MESFETs) can be fabricated using a commercial 3.5 V silicon-on-insulator (SOI) CMOS foundry with no changes to the CMOS process flow. The SOI MESFETs demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the MOSFET breakdown voltage. If the high voltage capability is to be exploited in radio frequency integrated circuits it is important to develop an accurate empirical model of the device. This paper presents the SPICE model development of the SOI MESFET. A measurement-based approach is used to customize a commercially available, large-signal TOM3 MESFET model. Using the TOM3 model, an SOI MESFET Colpitts oscillator operating at 1.5 GHz has been simulated with an output swing of 7 V to illustrate the high voltage RF applications of the device.

Original languageEnglish (US)
Pages (from-to)943-950
Number of pages8
JournalSolid-State Electronics
Volume50
Issue number6
DOIs
StatePublished - Jun 2006

Fingerprint

MISFET devices
MIS (semiconductors)
Silicon
field effect transistors
MESFET devices
silicon
Electric potential
high voltages
CMOS
SPICE
Foundries
Electric breakdown
Integrated circuits
foundries
electrical faults
metals
integrated circuits
radio frequencies
oscillators
insulators

Keywords

  • Large-signal model
  • MESFETs
  • Silicon-on-insulator
  • SPICE model
  • TOM3 capacitance model

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Balijepalli, A., Vijayaraghavan, R., Ervin, J., Yang, J., Islam, S. K., & Thornton, T. (2006). Large-signal modeling of SOI MESFETs. Solid-State Electronics, 50(6), 943-950. https://doi.org/10.1016/j.sse.2006.05.012

Large-signal modeling of SOI MESFETs. / Balijepalli, A.; Vijayaraghavan, R.; Ervin, J.; Yang, J.; Islam, S. K.; Thornton, Trevor.

In: Solid-State Electronics, Vol. 50, No. 6, 06.2006, p. 943-950.

Research output: Contribution to journalArticle

Balijepalli, A, Vijayaraghavan, R, Ervin, J, Yang, J, Islam, SK & Thornton, T 2006, 'Large-signal modeling of SOI MESFETs', Solid-State Electronics, vol. 50, no. 6, pp. 943-950. https://doi.org/10.1016/j.sse.2006.05.012
Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton T. Large-signal modeling of SOI MESFETs. Solid-State Electronics. 2006 Jun;50(6):943-950. https://doi.org/10.1016/j.sse.2006.05.012
Balijepalli, A. ; Vijayaraghavan, R. ; Ervin, J. ; Yang, J. ; Islam, S. K. ; Thornton, Trevor. / Large-signal modeling of SOI MESFETs. In: Solid-State Electronics. 2006 ; Vol. 50, No. 6. pp. 943-950.
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