Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation

Engineering & Materials Science

• High electron mobility transistors 98%
• Field effect transistors 90%
• Power amplifiers 83%
• Wave power 56%
• Networks (circuits) 46%
• Computational efficiency 41%
• Scattering 39%

Physics & Astronomy

• power amplifiers 100%
• high electron mobility transistors 87%
• harmonics 58%
• characterization 47%
• field effect transistors 33%
• simulation 32%
• time constant 20%
• performance 18%
• scattering 10%

Chemical Compounds

• Simulation 53%
• Time 22%