Abstract

We report the simulation of the large-signal performance of mm-wave FET power amplifiers obtained for the first time through Full Band Monte Carlo particle-based device simulation self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this FET simulation approach is possible only due to the computational efficiency of our Cellular Monte Carlo (CMC), which uses pre-computed scattering tables. On the other hand, a frequency domain circuit solver such as HB allows the simulation of the steady-state behavior of an external passive reactive network without the need for simulating long transient time (i.e. RC, L/C time constants) typical of time domain solutions. By exploiting this newly developed self-consistent CMC/HB code, we were able to time-efficiently characterize the mm-wave power performance of a state-of-the-art 30-nm gate-length InAlN/GaN HEMT.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

Fingerprint

High electron mobility transistors
power amplifiers
Field effect transistors
high electron mobility transistors
Power amplifiers
harmonics
Wave power
Networks (circuits)
Computational efficiency
field effect transistors
simulation
Scattering
time constant
scattering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation. / Guerra, D.; Marino, F. A.; Ferry, D. K.; Goodnick, Stephen; Saraniti, Marco; Soligo, R.

Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131668.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guerra, D, Marino, FA, Ferry, DK, Goodnick, S, Saraniti, M & Soligo, R 2011, Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation. in Technical Digest - International Electron Devices Meeting, IEDM., 6131668, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131668
Guerra, D. ; Marino, F. A. ; Ferry, D. K. ; Goodnick, Stephen ; Saraniti, Marco ; Soligo, R. / Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation. Technical Digest - International Electron Devices Meeting, IEDM. 2011.
@inproceedings{b68e6bdb182c4b1e8c0af1d1e89aa416,
title = "Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation",
abstract = "We report the simulation of the large-signal performance of mm-wave FET power amplifiers obtained for the first time through Full Band Monte Carlo particle-based device simulation self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this FET simulation approach is possible only due to the computational efficiency of our Cellular Monte Carlo (CMC), which uses pre-computed scattering tables. On the other hand, a frequency domain circuit solver such as HB allows the simulation of the steady-state behavior of an external passive reactive network without the need for simulating long transient time (i.e. RC, L/C time constants) typical of time domain solutions. By exploiting this newly developed self-consistent CMC/HB code, we were able to time-efficiently characterize the mm-wave power performance of a state-of-the-art 30-nm gate-length InAlN/GaN HEMT.",
author = "D. Guerra and Marino, {F. A.} and Ferry, {D. K.} and Stephen Goodnick and Marco Saraniti and R. Soligo",
year = "2011",
doi = "10.1109/IEDM.2011.6131668",
language = "English (US)",
isbn = "9781457705052",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

TY - GEN

T1 - Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation

AU - Guerra, D.

AU - Marino, F. A.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Saraniti, Marco

AU - Soligo, R.

PY - 2011

Y1 - 2011

N2 - We report the simulation of the large-signal performance of mm-wave FET power amplifiers obtained for the first time through Full Band Monte Carlo particle-based device simulation self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this FET simulation approach is possible only due to the computational efficiency of our Cellular Monte Carlo (CMC), which uses pre-computed scattering tables. On the other hand, a frequency domain circuit solver such as HB allows the simulation of the steady-state behavior of an external passive reactive network without the need for simulating long transient time (i.e. RC, L/C time constants) typical of time domain solutions. By exploiting this newly developed self-consistent CMC/HB code, we were able to time-efficiently characterize the mm-wave power performance of a state-of-the-art 30-nm gate-length InAlN/GaN HEMT.

AB - We report the simulation of the large-signal performance of mm-wave FET power amplifiers obtained for the first time through Full Band Monte Carlo particle-based device simulation self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this FET simulation approach is possible only due to the computational efficiency of our Cellular Monte Carlo (CMC), which uses pre-computed scattering tables. On the other hand, a frequency domain circuit solver such as HB allows the simulation of the steady-state behavior of an external passive reactive network without the need for simulating long transient time (i.e. RC, L/C time constants) typical of time domain solutions. By exploiting this newly developed self-consistent CMC/HB code, we were able to time-efficiently characterize the mm-wave power performance of a state-of-the-art 30-nm gate-length InAlN/GaN HEMT.

UR - http://www.scopus.com/inward/record.url?scp=84856994294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856994294&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131668

DO - 10.1109/IEDM.2011.6131668

M3 - Conference contribution

AN - SCOPUS:84856994294

SN - 9781457705052

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -