Abstract

We report the simulation of the large-signal performance of mm-wave FET power amplifiers obtained for the first time through Full Band Monte Carlo particle-based device simulation self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this FET simulation approach is possible only due to the computational efficiency of our Cellular Monte Carlo (CMC), which uses pre-computed scattering tables. On the other hand, a frequency domain circuit solver such as HB allows the simulation of the steady-state behavior of an external passive reactive network without the need for simulating long transient time (i.e. RC, L/C time constants) typical of time domain solutions. By exploiting this newly developed self-consistent CMC/HB code, we were able to time-efficiently characterize the mm-wave power performance of a state-of-the-art 30-nm gate-length InAlN/GaN HEMT.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages34.2.1-34.2.4
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Guerra, D., Marino, F. A., Ferry, D. K., Goodnick, S., Saraniti, M., & Soligo, R. (2011). Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 34.2.1-34.2.4). [6131668] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131668