Large-signal circuit-based time domain analysis of high frequency devices including distributed effects

Muhammad Waliullah, Samir M. El-Ghazaly, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

A fully distributed equivalent circuit model for MESFET is presented in this paper. The distributed circuit model incorporates sufficient number of segments to account for accurately wave propagation effects along device width. For the first time, distributed model having several segments is analyzed in time domain, which has the capability to evaluate large signal behavior. For a given MESFET, passive equivalent circuit elements are extracted from full wave simulation of the passive part as coplanar-coupled transmission lines using finite difference time domain technique. Active equivalent circuit elements are obtained from full hydrodynamic simulation with Curtice large signal model. The two equivalent circuits are combined together to form the basic unit segment. Several high frequency and high power characteristics of transistors are investigated and compared with previously published results.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Pages2145-2148
Number of pages4
Volume3
StatePublished - 2002
EventIEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: Jun 2 2002Jun 7 2002

Other

OtherIEEE MTT-S International Microwave Symposium Digest
CountryUnited States
CitySeattle, WA
Period6/2/026/7/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Waliullah, M., El-Ghazaly, S. M., & Goodnick, S. (2002). Large-signal circuit-based time domain analysis of high frequency devices including distributed effects. In IEEE MTT-S International Microwave Symposium Digest (Vol. 3, pp. 2145-2148)