Large positive linear magnetoresistance in the two-dimensional t 2g electron gas at the EuO/SrTiO3 interface

Kristy J. Kormondy, Lingyuan Gao, Xiang Li, Sirong Lu, Agham B. Posadas, Shida Shen, Maxim Tsoi, Martha McCartney, David Smith, Jianshi Zhou, Leonid L. Lev, Marius Adrian Husanu, Vladimir N. Strocov, Alexander A. Demkov

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23 Scopus citations


The development of novel nano-oxide spintronic devices would benefit greatly from interfacing with emergent phenomena at oxide interfaces. In this paper, we integrate highly spin-split ferromagnetic semiconductor EuO onto perovskite SrTiO3 (001). A careful deposition of Eu metal by molecular beam epitaxy results in EuO growth via oxygen out-diffusion from SrTiO3. This in turn leaves behind a highly conductive interfacial layer through generation of oxygen vacancies. Below the Curie temperature of 70 K of EuO, this spin-polarized two-dimensional t 2g electron gas at the EuO/SrTiO3 interface displays very large positive linear magnetoresistance (MR). Soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) reveals the t 2g nature of the carriers. First principles calculations strongly suggest that Zeeman splitting, caused by proximity magnetism and oxygen vacancies in SrTiO3, is responsible for the MR. This system offers an as-yet-unexplored route to pursue proximity-induced effects in the oxide two-dimensional t 2g electron gas.

Original languageEnglish (US)
Article number7721
JournalScientific reports
Issue number1
StatePublished - Dec 1 2018

ASJC Scopus subject areas

  • General


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