Large negative persistent photoconductivity in InAs/AlSb quantum wells

Yu G. Sadofyev; A. Ramamoorthy; J. P. Bird; Shane Johnson; Yong-Hang Zhang

doi:10.1063/1.1926407

Large negative persistent photoconductivity in InAs/AlSb quantum wells

Yu G. Sadofyev, A. Ramamoorthy, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Negative persistent photoconductivity in backgated InAsAlSb quantum wells under red and blue light emitting diode illumination is observed to depend on both illumination energy and intensity. During these experiments the electron sheet density is varied by one order of magnitude from 5.6× 1011 to 5.8× 1010 cm-2. This behavior is attributed to the role of optically excited holes in the AlSb barrier layers near the InAs quantum well. Furthermore, a long relaxation time in the electron sheet density is observed and attributed to the slow movement of electrons from the InAs quantum well to ionized deep levels in the AlSb barriers.

Original language	English (US)
Article number	192109
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	19
DOIs	https://doi.org/10.1063/1.1926407
State	Published - May 9 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Large negative persistent photoconductivity in InAs/AlSb quantum wells",

abstract = "Negative persistent photoconductivity in backgated InAsAlSb quantum wells under red and blue light emitting diode illumination is observed to depend on both illumination energy and intensity. During these experiments the electron sheet density is varied by one order of magnitude from 5.6× 1011 to 5.8× 1010 cm-2. This behavior is attributed to the role of optically excited holes in the AlSb barrier layers near the InAs quantum well. Furthermore, a long relaxation time in the electron sheet density is observed and attributed to the slow movement of electrons from the InAs quantum well to ionized deep levels in the AlSb barriers.",

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AU - Sadofyev, Yu G.

AU - Ramamoorthy, A.

AU - Bird, J. P.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2005/5/9

Y1 - 2005/5/9

N2 - Negative persistent photoconductivity in backgated InAsAlSb quantum wells under red and blue light emitting diode illumination is observed to depend on both illumination energy and intensity. During these experiments the electron sheet density is varied by one order of magnitude from 5.6× 1011 to 5.8× 1010 cm-2. This behavior is attributed to the role of optically excited holes in the AlSb barrier layers near the InAs quantum well. Furthermore, a long relaxation time in the electron sheet density is observed and attributed to the slow movement of electrons from the InAs quantum well to ionized deep levels in the AlSb barriers.

AB - Negative persistent photoconductivity in backgated InAsAlSb quantum wells under red and blue light emitting diode illumination is observed to depend on both illumination energy and intensity. During these experiments the electron sheet density is varied by one order of magnitude from 5.6× 1011 to 5.8× 1010 cm-2. This behavior is attributed to the role of optically excited holes in the AlSb barrier layers near the InAs quantum well. Furthermore, a long relaxation time in the electron sheet density is observed and attributed to the slow movement of electrons from the InAs quantum well to ionized deep levels in the AlSb barriers.

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Large negative persistent photoconductivity in InAs/AlSb quantum wells

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