Large negative persistent photoconductivity in InAs/AlSb quantum wells

Yu G. Sadofyev, A. Ramamoorthy, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Negative persistent photoconductivity in backgated InAsAlSb quantum wells under red and blue light emitting diode illumination is observed to depend on both illumination energy and intensity. During these experiments the electron sheet density is varied by one order of magnitude from 5.6× 1011 to 5.8× 1010 cm-2. This behavior is attributed to the role of optically excited holes in the AlSb barrier layers near the InAs quantum well. Furthermore, a long relaxation time in the electron sheet density is observed and attributed to the slow movement of electrons from the InAs quantum well to ionized deep levels in the AlSb barriers.

Original languageEnglish (US)
Article number192109
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number19
DOIs
StatePublished - May 9 2005

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photoconductivity
quantum wells
illumination
electrons
barrier layers
light emitting diodes
relaxation time
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Large negative persistent photoconductivity in InAs/AlSb quantum wells. / Sadofyev, Yu G.; Ramamoorthy, A.; Bird, J. P.; Johnson, Shane; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 86, No. 19, 192109, 09.05.2005, p. 1-3.

Research output: Contribution to journalArticle

Sadofyev, Yu G. ; Ramamoorthy, A. ; Bird, J. P. ; Johnson, Shane ; Zhang, Yong-Hang. / Large negative persistent photoconductivity in InAs/AlSb quantum wells. In: Applied Physics Letters. 2005 ; Vol. 86, No. 19. pp. 1-3.
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