Large electric-field induced electron drift velocity observed in an In xGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K

W. Liang, Kong-Thon Tsen, D. K. Ferry, Meng Chyi Wu, Chong Long Ho, Wen Jeng Ho

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The electron transport properties in an InxGa 1-xAs-based semiconductor nanostructure under the application of an electric field were measured using transient subpicosecond Raman spectroscopy. The electron drift velocity was found to be larger than either GaAs or InP-based p-i-n nanostructures. The results were compared with Monte Carlo calculations.

Original languageEnglish (US)
Pages (from-to)1438-1440
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - Aug 18 2003


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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