The electron transport properties in an InxGa 1-xAs-based semiconductor nanostructure under the application of an electric field were measured using transient subpicosecond Raman spectroscopy. The electron drift velocity was found to be larger than either GaAs or InP-based p-i-n nanostructures. The results were compared with Monte Carlo calculations.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Aug 18 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)