Large electric-field induced electron drift velocity observed in an In xGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K

W. Liang; Kong-Thon Tsen; D. K. Ferry; Meng Chyi Wu; Chong Long Ho; Wen Jeng Ho

doi:10.1063/1.1602167

Large electric-field induced electron drift velocity observed in an In _xGa_1-xAs-based p-i-n semiconductor nanostructure at T=300 K

W. Liang, Kong-Thon Tsen, D. K. Ferry, Meng Chyi Wu, Chong Long Ho, Wen Jeng Ho

Research output: Contribution to journal › Article › peer-review

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Abstract

The electron transport properties in an In_xGa _1-xAs-based semiconductor nanostructure under the application of an electric field were measured using transient subpicosecond Raman spectroscopy. The electron drift velocity was found to be larger than either GaAs or InP-based p-i-n nanostructures. The results were compared with Monte Carlo calculations.

Original language	English (US)
Pages (from-to)	1438-1440
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	7
DOIs	https://doi.org/10.1063/1.1602167
State	Published - Aug 18 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Large electric-field induced electron drift velocity observed in an In xGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K",

abstract = "The electron transport properties in an InxGa 1-xAs-based semiconductor nanostructure under the application of an electric field were measured using transient subpicosecond Raman spectroscopy. The electron drift velocity was found to be larger than either GaAs or InP-based p-i-n nanostructures. The results were compared with Monte Carlo calculations.",

author = "W. Liang and Kong-Thon Tsen and Ferry, {D. K.} and Wu, {Meng Chyi} and Ho, {Chong Long} and Ho, {Wen Jeng}",

year = "2003",

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AU - Liang, W.

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Wu, Meng Chyi

AU - Ho, Chong Long

AU - Ho, Wen Jeng

PY - 2003/8/18

Y1 - 2003/8/18

N2 - The electron transport properties in an InxGa 1-xAs-based semiconductor nanostructure under the application of an electric field were measured using transient subpicosecond Raman spectroscopy. The electron drift velocity was found to be larger than either GaAs or InP-based p-i-n nanostructures. The results were compared with Monte Carlo calculations.

AB - The electron transport properties in an InxGa 1-xAs-based semiconductor nanostructure under the application of an electric field were measured using transient subpicosecond Raman spectroscopy. The electron drift velocity was found to be larger than either GaAs or InP-based p-i-n nanostructures. The results were compared with Monte Carlo calculations.

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DO - 10.1063/1.1602167

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Large electric-field induced electron drift velocity observed in an In _xGa_1-xAs-based p-i-n semiconductor nanostructure at T=300 K

Abstract

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