Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C

E. Srinivasan; S. J. Ellis; Robert Nemanich; G. N. Parsons

Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C

E. Srinivasan, S. J. Ellis, Robert Nemanich, G. N. Parsons

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A pulsed-gas intermittent deposition technique is used to deposit high crystallinity hydrogenated micro- or poly-crystalline silicon using silane and hydrogen. This method has been used to deposit crystallites that are comparable to those obtained using PECVD of fluorinated silanes. RHEED and TEM have been used to understand the nucleation process. The pulsed-gas method is promising for depositing polycrystalline silicon and subsequent use in thin film transistor applications.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	R.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimada, A.P. Alivisatos
Publisher	Materials Research Society
Pages	989-994
Number of pages	6
Volume	452
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Other

Other	Proceedings of the 1996 MRS Fall Meeting
City	Boston, MA, USA
Period	12/2/96 → 12/6/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C. / Srinivasan, E.; Ellis, S. J.; Nemanich, Robert et al.
Materials Research Society Symposium - Proceedings. ed. / R.W. Collins; P.M. Fauchet; I. Shimizu; J.C. Vial; T. Shimada; A.P. Alivisatos. Vol. 452 Materials Research Society, 1997. p. 989-994.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Srinivasan, E, Ellis, SJ, Nemanich, R & Parsons, GN 1997, Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C. in RW Collins, PM Fauchet, I Shimizu, JC Vial, T Shimada & AP Alivisatos (eds), Materials Research Society Symposium - Proceedings. vol. 452, Materials Research Society, pp. 989-994, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 12/2/96.

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abstract = "A pulsed-gas intermittent deposition technique is used to deposit high crystallinity hydrogenated micro- or poly-crystalline silicon using silane and hydrogen. This method has been used to deposit crystallites that are comparable to those obtained using PECVD of fluorinated silanes. RHEED and TEM have been used to understand the nucleation process. The pulsed-gas method is promising for depositing polycrystalline silicon and subsequent use in thin film transistor applications.",

author = "E. Srinivasan and Ellis, {S. J.} and Robert Nemanich and Parsons, {G. N.}",

year = "1997",

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AU - Srinivasan, E.

AU - Ellis, S. J.

AU - Nemanich, Robert

AU - Parsons, G. N.

PY - 1997

Y1 - 1997

N2 - A pulsed-gas intermittent deposition technique is used to deposit high crystallinity hydrogenated micro- or poly-crystalline silicon using silane and hydrogen. This method has been used to deposit crystallites that are comparable to those obtained using PECVD of fluorinated silanes. RHEED and TEM have been used to understand the nucleation process. The pulsed-gas method is promising for depositing polycrystalline silicon and subsequent use in thin film transistor applications.

AB - A pulsed-gas intermittent deposition technique is used to deposit high crystallinity hydrogenated micro- or poly-crystalline silicon using silane and hydrogen. This method has been used to deposit crystallites that are comparable to those obtained using PECVD of fluorinated silanes. RHEED and TEM have been used to understand the nucleation process. The pulsed-gas method is promising for depositing polycrystalline silicon and subsequent use in thin film transistor applications.

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M3 - Conference contribution

AN - SCOPUS:0030719085

VL - 452

SP - 989

EP - 994

BT - Materials Research Society Symposium - Proceedings

A2 - Collins, R.W.

A2 - Fauchet, P.M.

A2 - Shimizu, I.

A2 - Vial, J.C.

A2 - Shimada, T.

A2 - Alivisatos, A.P.

PB - Materials Research Society

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C

Abstract

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ASJC Scopus subject areas

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