Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C

E. Srinivasan, S. J. Ellis, Robert Nemanich, G. N. Parsons

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A pulsed-gas intermittent deposition technique is used to deposit high crystallinity hydrogenated micro- or poly-crystalline silicon using silane and hydrogen. This method has been used to deposit crystallites that are comparable to those obtained using PECVD of fluorinated silanes. RHEED and TEM have been used to understand the nucleation process. The pulsed-gas method is promising for depositing polycrystalline silicon and subsequent use in thin film transistor applications.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimada, A.P. Alivisatos
PublisherMaterials Research Society
Pages989-994
Number of pages6
Volume452
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period12/2/9612/6/96

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Srinivasan, E., Ellis, S. J., Nemanich, R., & Parsons, G. N. (1997). Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C. In R. W. Collins, P. M. Fauchet, I. Shimizu, J. C. Vial, T. Shimada, & A. P. Alivisatos (Eds.), Materials Research Society Symposium - Proceedings (Vol. 452, pp. 989-994). Materials Research Society.