Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices

M. J. Jackson, B. L. Jackson, N. Bodzin, A. Zakaira, X. Q. Liu, Richard King, M. S. Goorsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A focused ion beam (FIB) sample preparation technique is developed to produce very large areas of electron transparent material for plan-view transmission electron microscopy measurements from specific layers in a multi-layer device structure. An initial cross section FIB cut allows plan-view sample creation from any layer of interest, and therefore rapid characterization of the defect density as a function of depth is achievable for structures containing multiple layers, such as multi-junction metamorphic layer structures for high efficiency III-V solar cells. Uniform electron transparent plan-view areas of greater than 100 μm2 are extracted from a cross-section to facilitate observation of defect densities as low as ∼106 cm-2. To demonstrate the technique, the active cell layers of two inverted metamorphic III-V solar cell structures have been imaged to reveal defect densities as high as 109 cm2 and as low as 10 6 cm-2.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1620-1623
Number of pages4
DOIs
StatePublished - 2012
Externally publishedYes
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Defect density
Solar cells
Focused ion beams
Transmission electron microscopy
Electrons
Cells

Keywords

  • Defect characterization
  • metamorphic devices
  • plan view
  • TEM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Jackson, M. J., Jackson, B. L., Bodzin, N., Zakaira, A., Liu, X. Q., King, R., & Goorsky, M. S. (2012). Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1620-1623). [6317906] https://doi.org/10.1109/PVSC.2012.6317906

Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices. / Jackson, M. J.; Jackson, B. L.; Bodzin, N.; Zakaira, A.; Liu, X. Q.; King, Richard; Goorsky, M. S.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 1620-1623 6317906.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jackson, MJ, Jackson, BL, Bodzin, N, Zakaira, A, Liu, XQ, King, R & Goorsky, MS 2012, Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6317906, pp. 1620-1623, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317906
Jackson MJ, Jackson BL, Bodzin N, Zakaira A, Liu XQ, King R et al. Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 1620-1623. 6317906 https://doi.org/10.1109/PVSC.2012.6317906
Jackson, M. J. ; Jackson, B. L. ; Bodzin, N. ; Zakaira, A. ; Liu, X. Q. ; King, Richard ; Goorsky, M. S. / Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. pp. 1620-1623
@inproceedings{0a3adfaa3d434089afb910125f3395ff,
title = "Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices",
abstract = "A focused ion beam (FIB) sample preparation technique is developed to produce very large areas of electron transparent material for plan-view transmission electron microscopy measurements from specific layers in a multi-layer device structure. An initial cross section FIB cut allows plan-view sample creation from any layer of interest, and therefore rapid characterization of the defect density as a function of depth is achievable for structures containing multiple layers, such as multi-junction metamorphic layer structures for high efficiency III-V solar cells. Uniform electron transparent plan-view areas of greater than 100 μm2 are extracted from a cross-section to facilitate observation of defect densities as low as ∼106 cm-2. To demonstrate the technique, the active cell layers of two inverted metamorphic III-V solar cell structures have been imaged to reveal defect densities as high as 109 cm2 and as low as 10 6 cm-2.",
keywords = "Defect characterization, metamorphic devices, plan view, TEM",
author = "Jackson, {M. J.} and Jackson, {B. L.} and N. Bodzin and A. Zakaira and Liu, {X. Q.} and Richard King and Goorsky, {M. S.}",
year = "2012",
doi = "10.1109/PVSC.2012.6317906",
language = "English (US)",
isbn = "9781467300643",
pages = "1620--1623",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

}

TY - GEN

T1 - Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices

AU - Jackson, M. J.

AU - Jackson, B. L.

AU - Bodzin, N.

AU - Zakaira, A.

AU - Liu, X. Q.

AU - King, Richard

AU - Goorsky, M. S.

PY - 2012

Y1 - 2012

N2 - A focused ion beam (FIB) sample preparation technique is developed to produce very large areas of electron transparent material for plan-view transmission electron microscopy measurements from specific layers in a multi-layer device structure. An initial cross section FIB cut allows plan-view sample creation from any layer of interest, and therefore rapid characterization of the defect density as a function of depth is achievable for structures containing multiple layers, such as multi-junction metamorphic layer structures for high efficiency III-V solar cells. Uniform electron transparent plan-view areas of greater than 100 μm2 are extracted from a cross-section to facilitate observation of defect densities as low as ∼106 cm-2. To demonstrate the technique, the active cell layers of two inverted metamorphic III-V solar cell structures have been imaged to reveal defect densities as high as 109 cm2 and as low as 10 6 cm-2.

AB - A focused ion beam (FIB) sample preparation technique is developed to produce very large areas of electron transparent material for plan-view transmission electron microscopy measurements from specific layers in a multi-layer device structure. An initial cross section FIB cut allows plan-view sample creation from any layer of interest, and therefore rapid characterization of the defect density as a function of depth is achievable for structures containing multiple layers, such as multi-junction metamorphic layer structures for high efficiency III-V solar cells. Uniform electron transparent plan-view areas of greater than 100 μm2 are extracted from a cross-section to facilitate observation of defect densities as low as ∼106 cm-2. To demonstrate the technique, the active cell layers of two inverted metamorphic III-V solar cell structures have been imaged to reveal defect densities as high as 109 cm2 and as low as 10 6 cm-2.

KW - Defect characterization

KW - metamorphic devices

KW - plan view

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=84869393278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869393278&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2012.6317906

DO - 10.1109/PVSC.2012.6317906

M3 - Conference contribution

SN - 9781467300643

SP - 1620

EP - 1623

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

ER -