Large-Area Deposition of MoS2 by Pulsed Laser Deposition with in Situ Thickness Control

Martha I. Serna; Seong H. Yoo; Salvador Moreno; Yang Xi; Juan Pablo Oviedo; Hyunjoo Choi; Husam N. Alshareef; Moon J. Kim; Majid Minary-Jolandan; Manuel A. Quevedo-Lopez

doi:10.1021/acsnano.6b01636

Large-Area Deposition of MoS₂ by Pulsed Laser Deposition with in Situ Thickness Control

Martha I. Serna, Seong H. Yoo, Salvador Moreno, Yang Xi, Juan Pablo Oviedo, Hyunjoo Choi, Husam N. Alshareef, Moon J. Kim, Majid Minary-Jolandan, Manuel A. Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

196 Scopus citations

Abstract

A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS₂) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS₂ layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO₂), and amorphous (SiO₂) substrates. The films are deposited using carefully designed MoS₂ targets fabricated with excess sulfur and variable MoS₂ and sulfur particle size. Uniform and layered MoS₂ films as thin as two monolayers, with an electrical resistivity of 1.54 × 10⁴ ω cm^-1, were achieved. The MoS₂ stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS₂ films ranging from ∼1 to 10 monolayers can be deposited.

Original language	English (US)
Pages (from-to)	6054-6061
Number of pages	8
Journal	ACS nano
Volume	10
Issue number	6
DOIs	https://doi.org/10.1021/acsnano.6b01636
State	Published - Jun 28 2016
Externally published	Yes

Keywords

2D materials
MoS
PLD
electrical properties
engineered target
layered materials
pulsed laser deposition

ASJC Scopus subject areas

General Materials Science
General Engineering
General Physics and Astronomy

Access to Document

10.1021/acsnano.6b01636

Cite this

@article{00d93dbb01474df582e7abb0556f86ba,

title = "Large-Area Deposition of MoS2 by Pulsed Laser Deposition with in Situ Thickness Control",

abstract = "A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS2) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2) substrates. The films are deposited using carefully designed MoS2 targets fabricated with excess sulfur and variable MoS2 and sulfur particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 ω cm-1, were achieved. The MoS2 stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS2 films ranging from ∼1 to 10 monolayers can be deposited.",

keywords = "2D materials, MoS, PLD, electrical properties, engineered target, layered materials, pulsed laser deposition",

author = "Serna, {Martha I.} and Yoo, {Seong H.} and Salvador Moreno and Yang Xi and Oviedo, {Juan Pablo} and Hyunjoo Choi and Alshareef, {Husam N.} and Kim, {Moon J.} and Majid Minary-Jolandan and Quevedo-Lopez, {Manuel A.}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = jun,

day = "28",

doi = "10.1021/acsnano.6b01636",

language = "English (US)",

volume = "10",

pages = "6054--6061",

journal = "ACS nano",

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T1 - Large-Area Deposition of MoS2 by Pulsed Laser Deposition with in Situ Thickness Control

AU - Serna, Martha I.

AU - Yoo, Seong H.

AU - Moreno, Salvador

AU - Xi, Yang

AU - Oviedo, Juan Pablo

AU - Choi, Hyunjoo

AU - Alshareef, Husam N.

AU - Kim, Moon J.

AU - Minary-Jolandan, Majid

AU - Quevedo-Lopez, Manuel A.

PY - 2016/6/28

Y1 - 2016/6/28

N2 - A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS2) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2) substrates. The films are deposited using carefully designed MoS2 targets fabricated with excess sulfur and variable MoS2 and sulfur particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 ω cm-1, were achieved. The MoS2 stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS2 films ranging from ∼1 to 10 monolayers can be deposited.

AB - A scalable and catalyst-free method to deposit stoichiometric molybdenum disulfide (MoS2) films over large areas is reported, with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation, including single-crystal (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2) substrates. The films are deposited using carefully designed MoS2 targets fabricated with excess sulfur and variable MoS2 and sulfur particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 ω cm-1, were achieved. The MoS2 stoichiometry was confirmed by high-resolution Rutherford backscattering spectrometry. With the method reported here, in situ graded MoS2 films ranging from ∼1 to 10 monolayers can be deposited.

KW - 2D materials

KW - MoS

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KW - electrical properties

KW - engineered target

KW - layered materials

KW - pulsed laser deposition

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