Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique

H. Alexander, H. R. Kolar, John Spence

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The stacking fault ribbon of dissociated 60° dislocations in silicon is imaged with resolution better than 0.33 nm. The dissociation width of the dislocations had been frozen in under high shear stress. It is relaxed by heating within the electron microscope. The dynamics of kinks on the partial dislocations can be analyzed in this way. We find the migration energy of kinks on 90° partials to be Wm = (1.24 ± 0.07) eV. The formation energy of a single kink is estimated to Fk = (0.73 ± 0.15) eV. Obstacles for kink motion are observed under the beam; they are thermally overcome with activation energy Eu = 2.4 eV.

Original languageEnglish (US)
Pages (from-to)5-16
Number of pages12
JournalPhysica Status Solidi (A) Applied Research
Volume171
Issue number1
StatePublished - 1999

Fingerprint

Stacking faults
Silicon
Dislocations (crystals)
Shear stress
Electron microscopes
Activation energy
Transmission electron microscopy
Heating
transmission electron microscopy
silicon
energy of formation
crystal defects
ribbons
shear stress
electron microscopes
dissociation
activation energy
heating
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique. / Alexander, H.; Kolar, H. R.; Spence, John.

In: Physica Status Solidi (A) Applied Research, Vol. 171, No. 1, 1999, p. 5-16.

Research output: Contribution to journalArticle

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