Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique

H. Alexander; H. R. Kolar; John Spence

doi:10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L

Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique

H. Alexander, H. R. Kolar, John Spence

Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The stacking fault ribbon of dissociated 60° dislocations in silicon is imaged with resolution better than 0.33 nm. The dissociation width of the dislocations had been frozen in under high shear stress. It is relaxed by heating within the electron microscope. The dynamics of kinks on the partial dislocations can be analyzed in this way. We find the migration energy of kinks on 90° partials to be W_m = (1.24 ± 0.07) eV. The formation energy of a single kink is estimated to F_k = (0.73 ± 0.15) eV. Obstacles for kink motion are observed under the beam; they are thermally overcome with activation energy E_u = 2.4 eV.

Original language	English (US)
Pages (from-to)	5-16
Number of pages	12
Journal	Physica Status Solidi (A) Applied Research
Volume	171
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L
State	Published - 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L

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@article{2f50a47e02114a39823e34a456fa107d,

title = "Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique",

abstract = "The stacking fault ribbon of dissociated 60° dislocations in silicon is imaged with resolution better than 0.33 nm. The dissociation width of the dislocations had been frozen in under high shear stress. It is relaxed by heating within the electron microscope. The dynamics of kinks on the partial dislocations can be analyzed in this way. We find the migration energy of kinks on 90° partials to be Wm = (1.24 ± 0.07) eV. The formation energy of a single kink is estimated to Fk = (0.73 ± 0.15) eV. Obstacles for kink motion are observed under the beam; they are thermally overcome with activation energy Eu = 2.4 eV.",

author = "H. Alexander and Kolar, {H. R.} and John Spence",

year = "1999",

doi = "10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L",

language = "English (US)",

volume = "171",

pages = "5--16",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique

AU - Alexander, H.

AU - Kolar, H. R.

AU - Spence, John

PY - 1999

Y1 - 1999

N2 - The stacking fault ribbon of dissociated 60° dislocations in silicon is imaged with resolution better than 0.33 nm. The dissociation width of the dislocations had been frozen in under high shear stress. It is relaxed by heating within the electron microscope. The dynamics of kinks on the partial dislocations can be analyzed in this way. We find the migration energy of kinks on 90° partials to be Wm = (1.24 ± 0.07) eV. The formation energy of a single kink is estimated to Fk = (0.73 ± 0.15) eV. Obstacles for kink motion are observed under the beam; they are thermally overcome with activation energy Eu = 2.4 eV.

AB - The stacking fault ribbon of dissociated 60° dislocations in silicon is imaged with resolution better than 0.33 nm. The dissociation width of the dislocations had been frozen in under high shear stress. It is relaxed by heating within the electron microscope. The dynamics of kinks on the partial dislocations can be analyzed in this way. We find the migration energy of kinks on 90° partials to be Wm = (1.24 ± 0.07) eV. The formation energy of a single kink is estimated to Fk = (0.73 ± 0.15) eV. Obstacles for kink motion are observed under the beam; they are thermally overcome with activation energy Eu = 2.4 eV.

UR - http://www.scopus.com/inward/record.url?scp=0032760448&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032760448&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L

DO - 10.1002/(SICI)1521-396X(199901)171:1<5::AID-PSSA5>3.0.CO;2-L

M3 - Article

AN - SCOPUS:0032760448

SN - 0031-8965

VL - 171

SP - 5

EP - 16

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Kinks on partials of 60° dislocations in silicon as revealed by a novel TEM technique

Abstract

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