Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

John Spence

doi:10.1103/PhysRevB.38.12672

Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

John Spence

CLAS-NS: Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

Original language	English (US)
Pages (from-to)	12672-12674
Number of pages	3
Journal	Physical Review B
Volume	38
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.38.12672
State	Published - 1988

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.38.12672

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title = "Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface",

abstract = "An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.",

author = "John Spence",

year = "1988",

doi = "10.1103/PhysRevB.38.12672",

language = "English (US)",

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pages = "12672--12674",

journal = "Physical Review B",

issn = "0163-1829",

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PY - 1988

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N2 - An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

AB - An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

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DO - 10.1103/PhysRevB.38.12672

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JO - Physical Review B

JF - Physical Review B

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IS - 17

ER -

Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

Abstract

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