Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

John Spence

doi:10.1103/PhysRevB.38.12672

Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

John Spence

Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

Original language	English (US)
Pages (from-to)	12672-12674
Number of pages	3
Journal	Physical Review B
Volume	38
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.38.12672
State	Published - 1988

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1103/PhysRevB.38.12672

Cite this

@article{3e6dd51692e648fabc1b7daae11b2fe0,

title = "Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface",

abstract = "An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.",

author = "John Spence",

year = "1988",

doi = "10.1103/PhysRevB.38.12672",

language = "English (US)",

volume = "38",

pages = "12672--12674",

journal = "Physical Review B",

issn = "0163-1829",

number = "17",

}

TY - JOUR

T1 - Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

AU - Spence, John

PY - 1988

Y1 - 1988

N2 - An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

AB - An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

UR - http://www.scopus.com/inward/record.url?scp=24844442310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24844442310&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.38.12672

DO - 10.1103/PhysRevB.38.12672

M3 - Article

AN - SCOPUS:24844442310

VL - 38

SP - 12672

EP - 12674

JO - Physical Review B

JF - Physical Review B

SN - 0163-1829

IS - 17

ER -

Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this