Abstract
An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.
Original language | English (US) |
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Pages (from-to) | 12672-12674 |
Number of pages | 3 |
Journal | Physical Review B |
Volume | 38 |
Issue number | 17 |
DOIs | |
State | Published - 1988 |
ASJC Scopus subject areas
- Condensed Matter Physics