An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.
ASJC Scopus subject areas
- Condensed Matter Physics