Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

John Spence

doi:10.1103/PhysRevB.38.12672

Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

John Spence

CLAS-NS: Physics

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

Original language	English (US)
Pages (from-to)	12672-12674
Number of pages	3
Journal	Physical Review B
Volume	38
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.38.12672
State	Published - Jan 1 1988

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.38.12672

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Spence, J. (1988). Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface. Physical Review B, 38(17), 12672-12674. https://doi.org/10.1103/PhysRevB.38.12672

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