Kinetics of growth coalescence of In/GaAs

James Adams, W. N G Hitchon, L. M. Holzmann

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The nucleation and growth of In clusters on GaAs has been numerically modelled using a kinetic rate equation approach. The rate equations were solved using a propagator method which is more efficient than a finite-difference scheme, allowing large time steps during which clusters grow by many atoms. The rate of growth coalescence is calculated analytically. A Monte Carlo model of nucleation and growth is presented and shown to yield equivalent results to the propagator method. Both models are used to determine growth mechanisms and the diffusion rate of In atoms on GaAs, using the data of Savage and Lagally. The effect of changing the deposition rate or substrate temperature on the average island size is predicted, and shown to agree with the available data.

Original languageEnglish (US)
Pages (from-to)2029-2033
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume6
Issue number3
DOIs
StatePublished - 1988
Externally publishedYes

Fingerprint

Coalescence
coalescing
Kinetics
kinetics
Nucleation
Atoms
nucleation
Deposition rates
propagation
atoms
gallium arsenide
Substrates
Temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Kinetics of growth coalescence of In/GaAs. / Adams, James; Hitchon, W. N G; Holzmann, L. M.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 6, No. 3, 1988, p. 2029-2033.

Research output: Contribution to journalArticle

Adams, James ; Hitchon, W. N G ; Holzmann, L. M. / Kinetics of growth coalescence of In/GaAs. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1988 ; Vol. 6, No. 3. pp. 2029-2033.
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