Kinetics of growth coalescence of In/GaAs

J. B. Adams; W. N.G. Hitchon; L. M. Holzmann

doi:10.1116/1.575593

Kinetics of growth coalescence of In/GaAs

J. B. Adams, W. N.G. Hitchon, L. M. Holzmann

Research output: Contribution to journal › Article › peer-review

Abstract

The nucleation and growth of In clusters on GaAs has been numerically modelled using a kinetic rate equation approach. The rate equations were solved using a propagator method which is more efficient than a finite-difference scheme, allowing large time steps during which clusters grow by many atoms. The rate of growth coalescence is calculated analytically. A Monte Carlo model of nucleation and growth is presented and shown to yield equivalent results to the propagator method. Both models are used to determine growth mechanisms and the diffusion rate of In atoms on GaAs, using the data of Savage and Lagally. The effect of changing the deposition rate or substrate temperature on the average island size is predicted, and shown to agree with the available data.

Original language	English (US)
Pages (from-to)	2029-2033
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	6
Issue number	3
DOIs	https://doi.org/10.1116/1.575593
State	Published - May 1988
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.575593

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year = "1988",

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AU - Hitchon, W. N.G.

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N2 - The nucleation and growth of In clusters on GaAs has been numerically modelled using a kinetic rate equation approach. The rate equations were solved using a propagator method which is more efficient than a finite-difference scheme, allowing large time steps during which clusters grow by many atoms. The rate of growth coalescence is calculated analytically. A Monte Carlo model of nucleation and growth is presented and shown to yield equivalent results to the propagator method. Both models are used to determine growth mechanisms and the diffusion rate of In atoms on GaAs, using the data of Savage and Lagally. The effect of changing the deposition rate or substrate temperature on the average island size is predicted, and shown to agree with the available data.

AB - The nucleation and growth of In clusters on GaAs has been numerically modelled using a kinetic rate equation approach. The rate equations were solved using a propagator method which is more efficient than a finite-difference scheme, allowing large time steps during which clusters grow by many atoms. The rate of growth coalescence is calculated analytically. A Monte Carlo model of nucleation and growth is presented and shown to yield equivalent results to the propagator method. Both models are used to determine growth mechanisms and the diffusion rate of In atoms on GaAs, using the data of Savage and Lagally. The effect of changing the deposition rate or substrate temperature on the average island size is predicted, and shown to agree with the available data.

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Kinetics of growth coalescence of In/GaAs

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