Kinetically suppressed ostwald ripening of Ge/Si(100) hut clusters

Michael R. McKay, J. A. Venables, Jeffery Drucker

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Low area density Ge/Si(100) hut cluster ensembles are stable during days-long growth temperature anneals. Real-time scanning tunneling microscopy shows that all islands grow slowly at a decreasing rate throughout the anneal. Island growth depletes the Ge supersaturation that, in turn, reduces the island growth rate. A mean-field facet nucleation and growth model quantitatively predicts the observed growth rate. It shows that Ostwald ripening is kinetically suppressed for Ge supersaturations high enough to support a critical nucleus size less than the smallest facet.

Original languageEnglish (US)
Article number216104
JournalPhysical Review Letters
Volume101
Issue number21
DOIs
StatePublished - Nov 21 2008

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Ostwald ripening
supersaturation
flat surfaces
scanning tunneling microscopy
nucleation
nuclei

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kinetically suppressed ostwald ripening of Ge/Si(100) hut clusters. / McKay, Michael R.; Venables, J. A.; Drucker, Jeffery.

In: Physical Review Letters, Vol. 101, No. 21, 216104, 21.11.2008.

Research output: Contribution to journalArticle

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