Kinetically induced kinking of vapor-liquid-solid grown epitaxial Si nanowires

Prashanth Madras, Eric Dailey, Jeffery Drucker

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

Epitaxial Si nanowires grown from Au seeds using the vapor-liquid-solid method begin growing normal to the Si(111) substrate atop a tapered base. After a kinetically determined length, the NWs may kink away from [111] to another crystallographic direction. The smallest NWs prefer growth along (110) while larger Si NWs choose either (111) or (112) based on whether growth conditions favor Au-free sidewalls. "Vertical" growth normal to the Si(111) substrate is obtained only for slowly growing NWs with Au-decorated sidewalls. At the fastest growth rates, single-crystal Si NWs smoothly, continuously, and randomly vary their growth directions, producing a morphology that is qualitatively different than highly kinked growth.

Original languageEnglish (US)
Pages (from-to)3826-3830
Number of pages5
JournalNano Letters
Volume9
Issue number11
DOIs
StatePublished - Dec 11 2009

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Kinetically induced kinking of vapor-liquid-solid grown epitaxial Si nanowires. / Madras, Prashanth; Dailey, Eric; Drucker, Jeffery.

In: Nano Letters, Vol. 9, No. 11, 11.12.2009, p. 3826-3830.

Research output: Contribution to journalArticle

Madras, Prashanth ; Dailey, Eric ; Drucker, Jeffery. / Kinetically induced kinking of vapor-liquid-solid grown epitaxial Si nanowires. In: Nano Letters. 2009 ; Vol. 9, No. 11. pp. 3826-3830.
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