Kinetic lattice Monte Carlo simulations of silicon and germanium epitaxial growth on the silicon (100) surface

R. Akis, D. K. Ferry

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We present kinetic lattice Monte Carlo simulations of epitaxial growth of Si and Ge films on the Si (100) surface. Our simulations take into account surface reconstruction, in particular, how it makes the diffusion properties of ad-dimers and adatoms on the surface depend on the direction of motion and whether they are moving over a row or a trough. In the case of Ge expitaxial growth, when dealing with growth of Ge films, we incorporated the effect of Ge-Si exchange through a mechanism involving the ad-dimers. This results in a significant fraction of the first epitaxial layer containing Si, with an abrupt increase at one monolayer of coverage.

Original languageEnglish (US)
Pages (from-to)345-348
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume4
Issue number3
DOIs
StatePublished - May 2005

Fingerprint

Germanium
Epitaxial growth
Crystal lattices
Dimers
Silicon
Kinetics
Surface reconstruction
Adatoms
Epitaxial layers
Monolayers
Monte Carlo simulation

Keywords

  • Germanium
  • Kinetic lattice Monte Carlo (KLMC)
  • Silicon
  • Surface diffusion

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

Cite this

Kinetic lattice Monte Carlo simulations of silicon and germanium epitaxial growth on the silicon (100) surface. / Akis, R.; Ferry, D. K.

In: IEEE Transactions on Nanotechnology, Vol. 4, No. 3, 05.2005, p. 345-348.

Research output: Contribution to journalArticle

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