Kinetic lattice Monte Carlo simulations of silicon and germanium epitaxial growth on the silicon (100) surface

R. Akis, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present kinetic lattice Monte Carlo simulations of epitaxial growth of Si and Ge films on the Si (100) surface. Our simulations take into account surface reconstruction, in particular, how it makes the diffusion properties of ad-dimers and adatoms on the surface depend on the direction of motion and whether they are moving over a row or a trough. In the case of Ge expitaxial growth, when dealing with growth of Ge films, we incorporated the effect of Ge-Si exchange through a mechanism involving the ad-dimers. This results in a significant fraction of the first epitaxial layer containing Si, with an abrupt increase at one monolayer of coverage.

Original languageEnglish (US)
Pages (from-to)345-348
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume4
Issue number3
DOIs
StatePublished - May 1 2005

Keywords

  • Germanium
  • Kinetic lattice Monte Carlo (KLMC)
  • Silicon
  • Surface diffusion

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Kinetic lattice Monte Carlo simulations of silicon and germanium epitaxial growth on the silicon (100) surface'. Together they form a unique fingerprint.

Cite this