Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface

R. Akis, D. K. Ferry, Charles B. Musgrave

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

We present kinetic lattice Monte Carlo simulations of the Si (100) surface. Taking into account the known anisotropy produced by the surface reconstruction, we examine the diffusion properties of Si ad-dimers and adatoms on the surface. Our results show a transition from quasi-one-dimensional diffusion to two-dimensional motion as the temperature is raised.

Original languageEnglish (US)
Pages (from-to)183-187
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 1 2003
EventFourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States
Duration: Feb 17 2003Feb 21 2003

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Keywords

  • Kinetic lattice Monte Carlo
  • Silicon
  • Surface diffusion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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