Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface

R. Akis, D. K. Ferry, Charles B. Musgrave

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present kinetic lattice Monte Carlo simulations of the Si (100) surface. Taking into account the known anisotropy produced by the surface reconstruction, we examine the diffusion properties of Si ad-dimers and adatoms on the surface. Our results show a transition from quasi-one-dimensional diffusion to two-dimensional motion as the temperature is raised.

Original languageEnglish (US)
Pages (from-to)183-187
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 2003
Externally publishedYes

Fingerprint

Silicon
Kinetics
Surface reconstruction
Adatoms
kinetics
silicon
Dimers
Anisotropy
simulation
adatoms
dimers
anisotropy
Temperature
Monte Carlo simulation
temperature

Keywords

  • Kinetic lattice Monte Carlo
  • Silicon
  • Surface diffusion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface. / Akis, R.; Ferry, D. K.; Musgrave, Charles B.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 19, No. 1-2, 07.2003, p. 183-187.

Research output: Contribution to journalArticle

Akis, R. ; Ferry, D. K. ; Musgrave, Charles B. / Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface. In: Physica E: Low-Dimensional Systems and Nanostructures. 2003 ; Vol. 19, No. 1-2. pp. 183-187.
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