Kinetic Lattice Monte Carlo simulations of germanium island growth on prepatterned silicon (100) substrates

R. Akis, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have performed Kinetic Lattice Monte Carlo (KLMC) simulations of Ge island growth on Si (100) substrates that have been prepatterned to contain pits as well as trenches and plateaus. We obtain dome shaped islands that compare well with experimental observations.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages41-42
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period7/24/067/28/06

Keywords

  • Germanium
  • Kinetic Lattice Monte Carlo
  • Quantum dots
  • Silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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