Kinetic lattice Monte Carlo simulations of germanium epitaxial growth on the silicon (100) surface incorporating Si-Ge exchange

R. Akis, D. K. Ferry

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present kinetic lattice Monte Carlo simulations of Ge deposition onto the Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the effects of the exchange of Ge with Si atoms in the substrate and how this affects the interface between the materials. For this, we consider two possible mechanisms: (1) a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and (2), in the case of more than one monolayer of coverage, the exchange of Ge atoms below the surface to relieve misfit strain. The former mechanism results in only a small percentage of Si atoms being elevated to the first adsorbed monolayer, which settle at random locations on the surface. Beyond one monolayer, the latter mechanism strongly dominates what occurs and the reconstruction leads to some segregation of the Si and Ge atoms below the surface.

Original languageEnglish (US)
Pages (from-to)1821-1825
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number4
DOIs
StatePublished - 2005

Fingerprint

Germanium
Epitaxial growth
Crystal lattices
germanium
Silicon
Atoms
Kinetics
kinetics
silicon
Monolayers
simulation
Dimers
atoms
Ion exchange
dimers
Surface reconstruction
Substrates
Anisotropy
Monte Carlo simulation
anisotropy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We present kinetic lattice Monte Carlo simulations of Ge deposition onto the Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the effects of the exchange of Ge with Si atoms in the substrate and how this affects the interface between the materials. For this, we consider two possible mechanisms: (1) a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and (2), in the case of more than one monolayer of coverage, the exchange of Ge atoms below the surface to relieve misfit strain. The former mechanism results in only a small percentage of Si atoms being elevated to the first adsorbed monolayer, which settle at random locations on the surface. Beyond one monolayer, the latter mechanism strongly dominates what occurs and the reconstruction leads to some segregation of the Si and Ge atoms below the surface.",
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N2 - We present kinetic lattice Monte Carlo simulations of Ge deposition onto the Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the effects of the exchange of Ge with Si atoms in the substrate and how this affects the interface between the materials. For this, we consider two possible mechanisms: (1) a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and (2), in the case of more than one monolayer of coverage, the exchange of Ge atoms below the surface to relieve misfit strain. The former mechanism results in only a small percentage of Si atoms being elevated to the first adsorbed monolayer, which settle at random locations on the surface. Beyond one monolayer, the latter mechanism strongly dominates what occurs and the reconstruction leads to some segregation of the Si and Ge atoms below the surface.

AB - We present kinetic lattice Monte Carlo simulations of Ge deposition onto the Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the effects of the exchange of Ge with Si atoms in the substrate and how this affects the interface between the materials. For this, we consider two possible mechanisms: (1) a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and (2), in the case of more than one monolayer of coverage, the exchange of Ge atoms below the surface to relieve misfit strain. The former mechanism results in only a small percentage of Si atoms being elevated to the first adsorbed monolayer, which settle at random locations on the surface. Beyond one monolayer, the latter mechanism strongly dominates what occurs and the reconstruction leads to some segregation of the Si and Ge atoms below the surface.

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