Abstract
We present kinetic lattice Monte Carlo simulations of Ge deposition onto the Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the effects of the exchange of Ge with Si atoms in the substrate and how this affects the interface between the materials. For this, we consider two possible mechanisms: (1) a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and (2), in the case of more than one monolayer of coverage, the exchange of Ge atoms below the surface to relieve misfit strain. The former mechanism results in only a small percentage of Si atoms being elevated to the first adsorbed monolayer, which settle at random locations on the surface. Beyond one monolayer, the latter mechanism strongly dominates what occurs and the reconstruction leads to some segregation of the Si and Ge atoms below the surface.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1821-1825 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 23 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2005 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Kinetic lattice Monte Carlo simulations of germanium epitaxial growth on the silicon (100) surface incorporating Si-Ge exchange. / Akis, R.; Ferry, D. K.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 4, 2005, p. 1821-1825.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Kinetic lattice Monte Carlo simulations of germanium epitaxial growth on the silicon (100) surface incorporating Si-Ge exchange
AU - Akis, R.
AU - Ferry, D. K.
PY - 2005
Y1 - 2005
N2 - We present kinetic lattice Monte Carlo simulations of Ge deposition onto the Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the effects of the exchange of Ge with Si atoms in the substrate and how this affects the interface between the materials. For this, we consider two possible mechanisms: (1) a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and (2), in the case of more than one monolayer of coverage, the exchange of Ge atoms below the surface to relieve misfit strain. The former mechanism results in only a small percentage of Si atoms being elevated to the first adsorbed monolayer, which settle at random locations on the surface. Beyond one monolayer, the latter mechanism strongly dominates what occurs and the reconstruction leads to some segregation of the Si and Ge atoms below the surface.
AB - We present kinetic lattice Monte Carlo simulations of Ge deposition onto the Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the effects of the exchange of Ge with Si atoms in the substrate and how this affects the interface between the materials. For this, we consider two possible mechanisms: (1) a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and (2), in the case of more than one monolayer of coverage, the exchange of Ge atoms below the surface to relieve misfit strain. The former mechanism results in only a small percentage of Si atoms being elevated to the first adsorbed monolayer, which settle at random locations on the surface. Beyond one monolayer, the latter mechanism strongly dominates what occurs and the reconstruction leads to some segregation of the Si and Ge atoms below the surface.
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U2 - 10.1116/1.1943447
DO - 10.1116/1.1943447
M3 - Article
VL - 23
SP - 1821
EP - 1825
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 4
ER -