The Ge content of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) rises with increasing deposition rate. The rising Ge content is manifested by a decrease in the volume at which clusters change shape from pyramids to domes and is quantitatively confirmed using nm spatial resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. The areal density of dome clusters is controlled by the ratio between the deposition and surface diffusion rates whereas their composition is controlled by the ratio between the deposition and Si interdiffusion rates.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)