Kinetic control of Ge(Si)/Si(100) dome cluster composition

E. P. McDaniel, Qian Jiang, Peter Crozier, Jeffery Drucker, David Smith

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The Ge content of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) rises with increasing deposition rate. The rising Ge content is manifested by a decrease in the volume at which clusters change shape from pyramids to domes and is quantitatively confirmed using nm spatial resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. The areal density of dome clusters is controlled by the ratio between the deposition and surface diffusion rates whereas their composition is controlled by the ratio between the deposition and Si interdiffusion rates.

Original languageEnglish (US)
Article number223101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
StatePublished - Nov 30 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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