Abstract

Cascode amplifiers consisting of a common-source MOSFET integrated with a common-gate metal-semiconductor field-effect transistor (MESFET) have been manufactured using a commercial 45-nm silicon-on-insulator RF CMOS process. The enhanced breakdown voltage of the MESFETs combined with the high speed of the RF MOSFETs, results in a maximum cutoff frequency of up to 70 GHz, with a maximum available gain of 18 dB at K-band frequencies (18-27 GHz) using a 6-V supply. This high-frequency operation makes the proposed amplifier a prospective candidate for 5G and millimeter wave applications.

Original languageEnglish (US)
Pages (from-to)609-611
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume28
Issue number7
DOIs
StatePublished - Jul 1 2018

Fingerprint

MESFET devices
Cutoff frequency
extremely high frequencies
Electric breakdown
Millimeter waves
Frequency bands
CMOS
field effect transistors
amplifiers
Silicon
metals
electrical faults
millimeter waves
cut-off
high speed
insulators
Cascode amplifiers
silicon

Keywords

  • Cascode
  • fifth generation (5G)
  • metal-semiconductor field-effect transistor (MESFET)
  • millimeter wave (mm-wave)
  • power amplifiers (PAs)
  • silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

K -Band CMOS-Based MESFET Cascode Amplifiers. / Mehr, Payam; Lepkowski, William; Thornton, Trevor.

In: IEEE Microwave and Wireless Components Letters, Vol. 28, No. 7, 01.07.2018, p. 609-611.

Research output: Contribution to journalArticle

Mehr, Payam ; Lepkowski, William ; Thornton, Trevor. / K -Band CMOS-Based MESFET Cascode Amplifiers. In: IEEE Microwave and Wireless Components Letters. 2018 ; Vol. 28, No. 7. pp. 609-611.
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