Jsc improvement of CdS/Cu(In,Ga)Se2 solar cells after rapid thermal annealing

D. S. Chen, J. Yang, F. Xu, H. W. Du, J. W. Shi, Z. S. Yu, Y. H. Zhang, Z. Q. Ma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The thermal dynamic influence of microstructure and physical phase leading to the variation on the short-circuit density (Jsc) for the large size of CIGS solar cell has been investigated by the subsequent rapid thermal annealing (RTA) and optical and electrical analyses, respectively. The annealing temperature of 300°C is an optimized point for a high efficiency of 11.75% to a 125 × 125 mm2 cell. The photoluminescence (PL) and Raman spectra are used to electrical analysis on the improvement of Jsc. After RTA at 300°C treatment, the PL intensity increase about 15 times accompany with the vanish of deep level centers or traps such as vacancies and interstitials. The feature of the intensity and FWHM of Raman peak A1 is related to the grain sizes. The results indicate that subsequent thermal treatment of CIGS device directly leads to the reduction of deep levels and an increase of the concentration of minor carriers. The observation from the front reflection spectrum (FRS) and atomic force microscope (AFM) indicates that the increase of surface roughness causes the decrease of front reflection. It is obvious that the enhancement of Jsc can be ascribed to the less optical losses on the surface reflection and the increase of the diffusion current in the bulk.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages873-878
Number of pages6
DOIs
StatePublished - 2012
Externally publishedYes
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • CdS/Cu(In,Ga)Se
  • Rapid Thermal Annealing
  • Short circuit current density
  • electrical loss
  • optical loss

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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