IVA-3 Selectively Doped Heterostructure Divided-By-Two Circuit

Richard Kiehl, M. D. Feuer, R. H. Hendel, V. G. Keramidas, C. L. Allyn, R. Dingle

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)1587-1588
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume30
Issue number11
DOIs
StatePublished - 1983
Externally publishedYes

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Heterojunctions
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kiehl, R., Feuer, M. D., Hendel, R. H., Keramidas, V. G., Allyn, C. L., & Dingle, R. (1983). IVA-3 Selectively Doped Heterostructure Divided-By-Two Circuit. IEEE Transactions on Electron Devices, 30(11), 1587-1588. https://doi.org/10.1109/T-ED.1983.21375

IVA-3 Selectively Doped Heterostructure Divided-By-Two Circuit. / Kiehl, Richard; Feuer, M. D.; Hendel, R. H.; Keramidas, V. G.; Allyn, C. L.; Dingle, R.

In: IEEE Transactions on Electron Devices, Vol. 30, No. 11, 1983, p. 1587-1588.

Research output: Contribution to journalArticle

Kiehl, R, Feuer, MD, Hendel, RH, Keramidas, VG, Allyn, CL & Dingle, R 1983, 'IVA-3 Selectively Doped Heterostructure Divided-By-Two Circuit', IEEE Transactions on Electron Devices, vol. 30, no. 11, pp. 1587-1588. https://doi.org/10.1109/T-ED.1983.21375
Kiehl, Richard ; Feuer, M. D. ; Hendel, R. H. ; Keramidas, V. G. ; Allyn, C. L. ; Dingle, R. / IVA-3 Selectively Doped Heterostructure Divided-By-Two Circuit. In: IEEE Transactions on Electron Devices. 1983 ; Vol. 30, No. 11. pp. 1587-1588.
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