ITO/SiOx: H stacks for silicon heterojunction solar cells

Stanislau Herasimenka, William J. Dauksher, Mathieu Boccard, Stuart Bowden

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

A method of reducing optical losses in the transparent conductive oxides (TCO) used in silicon heterojunction solar cells without compromising with series resistance is described. In the method the thickness of a TCO is reduced two-three times and a hydrogenated dielectric is deposited on top to form a double layer antireflection coating. The conductivity of a thin TCO is increased due to the effect of hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41mA/cm2 generation current on 120-micron-thick wafers while having approximately 100Ω/square sheet resistance. The paper also considers integration of ITO/SiOx:H stacks with Cu plating and using ITO/SiNx/SiOx triple layer antireflection coatings.

Original languageEnglish (US)
JournalSolar Energy Materials and Solar Cells
DOIs
StateAccepted/In press - Mar 21 2016

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Keywords

  • Silicon heterojunction solar cells
  • Transparent conductive oxides

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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