ITO/SiOx:H stacks for silicon heterojunction solar cells

Stanislau Herasimenka; William J. Dauksher; Mathieu Boccard; Stuart Bowden

doi:10.1016/j.solmat.2016.05.024

ITO/SiO_x:H stacks for silicon heterojunction solar cells

Stanislau Herasimenka, William J. Dauksher, Mathieu Boccard, Stuart Bowden

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

A method of reducing optical losses in the transparent conductive oxides (TCO) used in silicon heterojunction solar cells without compromising with series resistance is described. In the method the thickness of a TCO is reduced two-three times and a hydrogenated dielectric is deposited on top to form a double layer antireflection coating. The conductivity of a thin TCO is increased due to the effect of hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiO_x:H stacks achieved more than 41 mA/cm² generation current on 120-micron-thick wafers while having approximately 100 Ω/square sheet resistance. The paper also considers integration of ITO/SiO_x:H stacks with Cu plating and using ITO/SiN_x/SiO_x triple layer antireflection coatings.

Original language	English (US)
Pages (from-to)	98-101
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	158
DOIs	https://doi.org/10.1016/j.solmat.2016.05.024
State	Published - Dec 1 2016

Keywords

Silicon heterojunction solar cells
Transparent conductive oxides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Access to Document

10.1016/j.solmat.2016.05.024

Cite this

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title = "ITO/SiOx:H stacks for silicon heterojunction solar cells",

abstract = "A method of reducing optical losses in the transparent conductive oxides (TCO) used in silicon heterojunction solar cells without compromising with series resistance is described. In the method the thickness of a TCO is reduced two-three times and a hydrogenated dielectric is deposited on top to form a double layer antireflection coating. The conductivity of a thin TCO is increased due to the effect of hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ω/square sheet resistance. The paper also considers integration of ITO/SiOx:H stacks with Cu plating and using ITO/SiNx/SiOx triple layer antireflection coatings.",

keywords = "Silicon heterojunction solar cells, Transparent conductive oxides",

author = "Stanislau Herasimenka and Dauksher, {William J.} and Mathieu Boccard and Stuart Bowden",

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doi = "10.1016/j.solmat.2016.05.024",

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AU - Herasimenka, Stanislau

AU - Dauksher, William J.

AU - Boccard, Mathieu

AU - Bowden, Stuart

PY - 2016/12/1

Y1 - 2016/12/1

N2 - A method of reducing optical losses in the transparent conductive oxides (TCO) used in silicon heterojunction solar cells without compromising with series resistance is described. In the method the thickness of a TCO is reduced two-three times and a hydrogenated dielectric is deposited on top to form a double layer antireflection coating. The conductivity of a thin TCO is increased due to the effect of hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ω/square sheet resistance. The paper also considers integration of ITO/SiOx:H stacks with Cu plating and using ITO/SiNx/SiOx triple layer antireflection coatings.

AB - A method of reducing optical losses in the transparent conductive oxides (TCO) used in silicon heterojunction solar cells without compromising with series resistance is described. In the method the thickness of a TCO is reduced two-three times and a hydrogenated dielectric is deposited on top to form a double layer antireflection coating. The conductivity of a thin TCO is increased due to the effect of hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ω/square sheet resistance. The paper also considers integration of ITO/SiOx:H stacks with Cu plating and using ITO/SiNx/SiOx triple layer antireflection coatings.

KW - Silicon heterojunction solar cells

KW - Transparent conductive oxides

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