Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy

F. M. Ross; J. Tersoff; R. M. Tromp; M. C. Reuter; Peter Bennett

Island growth of Ge on Si(001) and CoSi₂ on Si(111) studied with UHV electron microscopy

F. M. Ross, J. Tersoff, R. M. Tromp, M. C. Reuter, Peter Bennett

Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have observed and compared the growth of nanosize, self-assembled islands in two strained heteroepitaxial systems, Ge on Si(001) and CoSi₂ on Si(111). Island growth took place in a transmission electron microscope and in a low-energy electron microscope, both of which had been modified to allow in situ deposition. The kinetics of island formation are substantially different in the two systems, suggesting different growth mechanisms. We discuss the two mechanisms and their implications for controlled island growth for novel electronic devices.

Original language	English (US)
Pages (from-to)	1059-1066
Number of pages	8
Journal	Journal of Electron Microscopy
Volume	48
Issue number	SUPPL.
State	Published - Dec 1 1999

Keywords

Heteroepitaxy
Island formation
Quantum dots
Self-assembly
Semiconductor growth
Silicide growth

ASJC Scopus subject areas

Instrumentation

Cite this

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title = "Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy",

abstract = "We have observed and compared the growth of nanosize, self-assembled islands in two strained heteroepitaxial systems, Ge on Si(001) and CoSi2 on Si(111). Island growth took place in a transmission electron microscope and in a low-energy electron microscope, both of which had been modified to allow in situ deposition. The kinetics of island formation are substantially different in the two systems, suggesting different growth mechanisms. We discuss the two mechanisms and their implications for controlled island growth for novel electronic devices.",

keywords = "Heteroepitaxy, Island formation, Quantum dots, Self-assembly, Semiconductor growth, Silicide growth",

author = "Ross, {F. M.} and J. Tersoff and Tromp, {R. M.} and Reuter, {M. C.} and Peter Bennett",

year = "1999",

month = dec,

day = "1",

language = "English (US)",

volume = "48",

pages = "1059--1066",

journal = "Journal of Electron Microscopy",

issn = "0022-0744",

publisher = "Japanese Society of Microscopy",

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TY - JOUR

T1 - Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy

AU - Ross, F. M.

AU - Tersoff, J.

AU - Tromp, R. M.

AU - Reuter, M. C.

AU - Bennett, Peter

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We have observed and compared the growth of nanosize, self-assembled islands in two strained heteroepitaxial systems, Ge on Si(001) and CoSi2 on Si(111). Island growth took place in a transmission electron microscope and in a low-energy electron microscope, both of which had been modified to allow in situ deposition. The kinetics of island formation are substantially different in the two systems, suggesting different growth mechanisms. We discuss the two mechanisms and their implications for controlled island growth for novel electronic devices.

AB - We have observed and compared the growth of nanosize, self-assembled islands in two strained heteroepitaxial systems, Ge on Si(001) and CoSi2 on Si(111). Island growth took place in a transmission electron microscope and in a low-energy electron microscope, both of which had been modified to allow in situ deposition. The kinetics of island formation are substantially different in the two systems, suggesting different growth mechanisms. We discuss the two mechanisms and their implications for controlled island growth for novel electronic devices.

KW - Heteroepitaxy

KW - Island formation

KW - Quantum dots

KW - Self-assembly

KW - Semiconductor growth

KW - Silicide growth

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UR - http://www.scopus.com/inward/citedby.url?scp=0033502763&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033502763

SN - 0022-0744

VL - 48

SP - 1059

EP - 1066

JO - Journal of Electron Microscopy

JF - Journal of Electron Microscopy

IS - SUPPL.

ER -

Island growth of Ge on Si(001) and CoSi₂ on Si(111) studied with UHV electron microscopy

Abstract

Keywords

ASJC Scopus subject areas

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