Abstract

In this work we investigate self-heating effects in nanowire FETs. We find that, as in the case of FD SOI devices, the velocity overshoot effect of the carriers in the channel and reduced number of scattering events with phonons lead to smaller ON-current degradation in short compared to long channel nanowire transistors.

Original languageEnglish (US)
Title of host publicationNumerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers
Pages118-124
Number of pages7
DOIs
StatePublished - Mar 1 2011
Event7th International Conference on Numerical Methods and Applications, NMA 2010 - Borovets, Bulgaria
Duration: Aug 20 2010Aug 24 2010

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume6046 LNCS
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349

Other

Other7th International Conference on Numerical Methods and Applications, NMA 2010
CountryBulgaria
CityBorovets
Period8/20/108/24/10

    Fingerprint

Keywords

  • energy balance model for optical and acoustic phonons
  • nanowire FETs
  • particle-based device simulations
  • self-heating effects

ASJC Scopus subject areas

  • Theoretical Computer Science
  • Computer Science(all)

Cite this

Vasileska, D., Hossain, A., Raleva, K., & Goodnick, S. (2011). Is self-heating important in nanowire FETs? In Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers (pp. 118-124). (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 6046 LNCS). https://doi.org/10.1007/978-3-642-18466-6_13