Abstract

Heating effects are investigated in dual-gate devices using an in-house thermal particle-based device simulator. Our simulation results demonstrate that the dual-gate device structure is advantageous even though there is slightly higher current degradation due to lattice heating compared to conventional single gate structures, since the magnitude of the on-current is 1.5-1.8 times larger in this structure. Thus, one can trade off a slight increase in current degradation due to lattice heating for more current drive.

Original languageEnglish (US)
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages125-128
Number of pages4
DOIs
StatePublished - 2008
Event2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan
Duration: Sep 9 2008Sep 11 2008

Other

Other2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
CountryJapan
CityHakone
Period9/9/089/11/08

Keywords

  • DG devices
  • Heating effects
  • Hot phonons
  • Particle-based simulations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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