Abstract
Heating effects are investigated in dual-gate devices using an in-house thermal particle-based device simulator. Our simulation results demonstrate that the dual-gate device structure is advantageous even though there is slightly higher current degradation due to lattice heating compared to conventional single gate structures, since the magnitude of the on-current is 1.5-1.8 times larger in this structure. Thus, one can trade off a slight increase in current degradation due to lattice heating for more current drive.
| Original language | English (US) |
|---|---|
| Title of host publication | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD |
| Pages | 125-128 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 2008 |
| Event | 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan Duration: Sep 9 2008 → Sep 11 2008 |
Other
| Other | 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 |
|---|---|
| Country/Territory | Japan |
| City | Hakone |
| Period | 9/9/08 → 9/11/08 |
Keywords
- DG devices
- Heating effects
- Hot phonons
- Particle-based simulations
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Computer Science Applications
- Modeling and Simulation