Iron and Chromium Redistribution in Semi-Insulating InP

J. D. Oberstar, B. G. Srreetman, J. E. Baker, Peter Williams

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

The redistribution of the compensating dopants, iron or chromium, in semi-insulating indium phosphide has been studied using secondary ion mass spectrometry. Annealing with silicon nitride encapsulation results in impurity accumulation within the first 1000Å of the surface followed by depletion extending to a depth of ~1 µ.m. Profiles resulting from the implantation of “neutral” elements (He, B) exhibit accumulation at the surface and also accumulation at the projected range peak. The profiles are explained in terms of gettering of the compensating dopant to defect-rich regions.

Original languageEnglish (US)
Pages (from-to)1814-1817
Number of pages4
JournalJournal of the Electrochemical Society
Volume128
Issue number8
DOIs
StatePublished - 1981

Keywords

  • SIMS
  • anneal
  • gettering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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