Iron and Chromium Redistribution in Semi-Insulating InP

J. D. Oberstar; B. G. Srreetman; J. E. Baker; Peter Williams

doi:10.1149/1.2127737

Iron and Chromium Redistribution in Semi-Insulating InP

J. D. Oberstar, B. G. Srreetman, J. E. Baker, Peter Williams

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The redistribution of the compensating dopants, iron or chromium, in semi-insulating indium phosphide has been studied using secondary ion mass spectrometry. Annealing with silicon nitride encapsulation results in impurity accumulation within the first 1000Å of the surface followed by depletion extending to a depth of ~1 µ.m. Profiles resulting from the implantation of “neutral” elements (He, B) exhibit accumulation at the surface and also accumulation at the projected range peak. The profiles are explained in terms of gettering of the compensating dopant to defect-rich regions.

Original language	English (US)
Pages (from-to)	1814-1817
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	128
Issue number	8
DOIs	https://doi.org/10.1149/1.2127737
State	Published - 1981
Externally published	Yes

Keywords

SIMS
anneal
gettering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2127737

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abstract = "The redistribution of the compensating dopants, iron or chromium, in semi-insulating indium phosphide has been studied using secondary ion mass spectrometry. Annealing with silicon nitride encapsulation results in impurity accumulation within the first 1000{\AA} of the surface followed by depletion extending to a depth of ~1 µ.m. Profiles resulting from the implantation of “neutral” elements (He, B) exhibit accumulation at the surface and also accumulation at the projected range peak. The profiles are explained in terms of gettering of the compensating dopant to defect-rich regions.",

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AU - Oberstar, J. D.

AU - Srreetman, B. G.

AU - Baker, J. E.

AU - Williams, Peter

PY - 1981

Y1 - 1981

N2 - The redistribution of the compensating dopants, iron or chromium, in semi-insulating indium phosphide has been studied using secondary ion mass spectrometry. Annealing with silicon nitride encapsulation results in impurity accumulation within the first 1000Å of the surface followed by depletion extending to a depth of ~1 µ.m. Profiles resulting from the implantation of “neutral” elements (He, B) exhibit accumulation at the surface and also accumulation at the projected range peak. The profiles are explained in terms of gettering of the compensating dopant to defect-rich regions.

AB - The redistribution of the compensating dopants, iron or chromium, in semi-insulating indium phosphide has been studied using secondary ion mass spectrometry. Annealing with silicon nitride encapsulation results in impurity accumulation within the first 1000Å of the surface followed by depletion extending to a depth of ~1 µ.m. Profiles resulting from the implantation of “neutral” elements (He, B) exhibit accumulation at the surface and also accumulation at the projected range peak. The profiles are explained in terms of gettering of the compensating dopant to defect-rich regions.

KW - SIMS

KW - anneal

KW - gettering

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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ER -

Iron and Chromium Redistribution in Semi-Insulating InP

Abstract

Keywords

ASJC Scopus subject areas

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